MT29F128G08WAAC6 Micron, MT29F128G08WAAC6 Datasheet - Page 114

• Manufacturer Part Number: MT29F128G08WAAC6
• Description: NAND Flash Memory
• Manufacturer: Micron

Revision History
Rev. D, Production . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5/08
Rev. C, Production . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3/08
Rev. B, Preliminary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1/08
PDF: 09005aef8278ee3f / Source: 09005aef81f17540
16gb_nand_mlc_l52a__3.fm -Rev. D 5/08 EN
• “Features” on page 1: Changed BLOCK ERASE value.
• “General Description” on page 8: Updated description.
• Table 1: Signal Descriptions on page 12: Updated description.
• Figure 7: Memory Map (x8) on page 14: Updated figure notes.
• Table 4: Array Addressing: 64Gb and 128Gb x8 on page 16: Updated title.
• “Control Signals” on page 17: Updated content.
• Table 8: Device ID and Configuration Codes for Address 00h on page 27: Updated
• Table 10: Parameter Page Data Structure on page 29: Updated parameters.
• Table 26: PROGRAM/ERASE Characteristics on page 94: Updated content.
• Figure 61: PROGRAM for INTERNAL DATA MOVE Enable on page 85, Figure 61: PRO-
• Title area on page 1: Updated part numbers.
• “Features” on page 1: Updated sequential read timing to 25ns.
• Figure 2: Part Number Chart on page 2, and former Figure 96: Removed C5 package
• Figure 3: Pin Assignment (Top View) 48-Pin TSOP Type 1 on page 9: Updated pin 38 to
• Figure 9: Array Organization for 64Gb and 128Gb x8 on page 16: In note 1, changed all
• Table 10, Parameter Page Data Structure, on page 29: Added “Micron” to device man-
• Table 20, Device DC and Operating Characteristics, on page 91: Removed I
• Table 24, AC Characteristics: Command, Data, and Address Input, on page 92, and
• Table 25, AC Characteristics: Normal Operation, on page 93: Updated
• Updated status to Production.
• “NAND Flash Memory” on page 1: Updated part numbers.
• “Options” on page 1: Added package names in Configuration section.
• Figure 4: Pad Assignment (Top View) 52-Pad ULGA/VLGA on page 10: Updated refer-
• Figure 5: Pad Assignment (Top View) 52-Pad LLGA on page 11: Updated references to
• Table 1, Signal Descriptions, on page 12: Updated Symbol column values.
content.
GRAM for INTERNAL DATA MOVE Enable on page 85, Figure 65: TWO-PLANE PRO-
GRAM Enable on page 86, Figure 66: TWO-PLANE PROGRAM Disable on page 87:
Added new graphics in AI.
code and package diagram.
DNU/V
BA7 references tro BA6
ufacturer description; updated values column for bytes 129-130, 131–132, 254–255
(for all part numbers).
and former note 5.
Table 25, AC Characteristics: Normal Operation, on page 93: Updated note 1 to use
ONFI timing mode 4.
to 25ns;
ences to notes.
notes.
SS
t
REA from 16ns to 20ns;
.
Micron Confidential and Proprietary
114
www.DataSheet.net/
t
REH from 7ns to 10ns;
16, 32, 64, 128Gb NAND Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
RP from 10ns to 12ns.
©2005 Micron Technology, Inc. All rights reserved.
Revision History
t
RC from 20ns
SB
2 content
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