MT29F128G08WAAC6 Micron, MT29F128G08WAAC6 Datasheet - Page 93

• Manufacturer Part Number: MT29F128G08WAAC6
• Description: NAND Flash Memory
• Manufacturer: Micron

Table 25:
PDF: 09005aef8278ee3f / Source: 09005aef81f17540
16gb_nand_mlc_l52a__2.fm -Rev. D 5/08 EN
Parameter
ALE to RE# delay
Change column setup time
CE# access time
CE# HIGH to output High-Z
CLE to RE# delay
CE# HIGH to output hold
Cache busy in page read cache mode (first
31h)
Cache busy in page read cache mode (next
31h and 3Fh)
Output High-Z to RE# LOW
Data transfer from Flash array to data
register
READ cycle time
RE# access time
RE# HIGH hold time
RE# HIGH to output hold
RE# HIGH to WE# LOW
RE# HIGH to output High-Z
RE# LOW to output hold
RE# pulse width
Ready to RE# LOW
Reset time (READ/PROGRAM/ERASE)
WE# HIGH to busy
WE# HIGH to RE# LOW
AC Characteristics: Normal Operation
Notes: 1. Operating-mode timings meet ONFI timing mode 4 parameters.
2. Transition is measured ±200mV from steady-state voltage with load. This parameter is sam-
3. AC characteristics may need to be relaxed if I/O drive strength is not set to “full.” See
4. If RESET (FFh) command is loaded at ready state, the device goes busy for maximum 5µs.
5. Do not issue a new command during
pled and not 100 percent tested.
Table 14 on page 52 for additional details.
Micron Confidential and Proprietary
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AR
CCS
CEA
CHZ
CLR
COH
DCBSYR1
DCBSYR2
IR
R
RC
REA
REH
RHOH
RHW
RHZ
RLOH
RP
RR
RST
WB
WHR
93
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t
DCBSYR1
Min
100
10
70
10
15
25
10
15
12
20
60
16, 32, 64, 128Gb NAND Flash Memory
–
–
–
0
–
–
–
5
–
–
t
Micron Technology, Inc., reserves the right to change products or specifications without notice.
WB, even if R/B# is ready.
1
5/10/500
Max
100
100
25
30
50
50
20
–
–
–
5
–
–
–
–
–
–
–
–
Electrical Characteristics
1
©2005 Micron Technology, Inc. All rights reserved.
Unit
ns
ns
ns
ns
ns
ns
µs
µs
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
Notes
2, 3
2
3
3
3
4
5
Datasheet pdf - http://www.DataSheet4U.co.kr/