MT29F128G08WAAC6 Micron, MT29F128G08WAAC6 Datasheet - Page 23

• Manufacturer Part Number: MT29F128G08WAAC6
• Description: NAND Flash Memory
• Manufacturer: Micron

Table 7:
PDF: 09005aef8278ee3f / Source: 09005aef81f17540
16gb_nand_mlc_l52a__2.fm -Rev. D 5/08 EN
Command
TWO-PLANE PAGE READ
TWO-PLANE READ
for INTERNAL DATA MOVE
TWO-PLANE RANDOM DATA READ
TWO-PLANE/MULTIPLE-DIE READ
STATUS
TWO-PLANE PROGRAM PAGE
TWO-PLANE PROGRAM PAGE CACHE
MODE
TWO-PLANE PROGRAM for INTERNAL
DATA MOVE
TWO-PLANE BLOCK ERASE
Two-Plane Command Set
Notes: 1. Do not cross plane address boundaries when using TWO-PLANE READ for INTERNAL DATA
2. The TWO-PLANE/MULTIPLE-DIE READ STATUS command must be used to check status dur-
3. The commands are valid during busy when interleaved die operations are being per-
MOVE and TWO-PLANE PROGRAM for INTERNAL DATA MOVE. See Figure 8 on page 15 for
plane address boundary definitions.
ing and following interleaved die operations. See “Interleaved Die Operations” on
page 68 for additional details.
formed. See “Interleaved Die Operations” on page 68 for additional details.
Command
Cycle 1
Micron Confidential and Proprietary
00h
00h
06h
78h
80h
80h
85h
60h
Number of
Address
Cycles
5
5
5
3
5
5
5
3
23
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Command
16, 32, 64, 128Gb NAND Flash Memory
D1h-60h
11h-80h
11h-80h
11h-85h
Cycle 2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
00h
00h
E0h
–
Number of
Address
Cycles
5
5
–
–
5
5
5
3
Command Definitions
Command
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Cycle 3
D0h
30h
35h
10h
15h
10h
–
–
During
Valid
Busy
Yes
No
No
No
No
No
No
No
Notes
2, 3
1, 3
1
3
3
3
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