MT29F128G08WAAC6 Micron, MT29F128G08WAAC6 Datasheet - Page 92

• Manufacturer Part Number: MT29F128G08WAAC6
• Description: NAND Flash Memory
• Manufacturer: Micron

Table 22:
Table 23:
Table 24:
PDF: 09005aef8278ee3f / Source: 09005aef81f17540
16gb_nand_mlc_l52a__2.fm -Rev. D 5/08 EN
Description
Parameter
Parameter
Input capacitance
Input/output capacitance (I/O)
Input pulse levels
Input rise and fall times
Input and output timing levels
Output load
ALE to data start
ALE hold time
ALE setup time
CE# hold time
CLE hold time
CLE setup time
CE# setup time
Data hold time
Data setup time
WRITE cycle time
WE# pulse width HIGH
WE# pulse width
WP# setup time
Capacitance
Test Conditions
AC Characteristics: Command, Data, and Address Input
Notes: 1. These parameters are verified in device characterization and are not 100 percent tested.
Notes: 1. Verified in device characterization; not 100 percent tested.
Notes: 1. Operating-mode timings meet ONFI timing mode 4 parameters.
2. Test conditions: T
2. Timing for
with the first rising edge of WE# for data input.
MT29FxxG08xAA (V
MT29FxxG08xAA
MT29FxxG08xAA (V
Symbol
C
C
OUT
Micron Confidential and Proprietary
t
IN
ADL begins in the ADDRESS cycle, on the final rising edge of WE#, and ends
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
ADL
ALH
ALS
CH
CLH
CLS
CS
DH
DS
WC
WH
WP
WW
c
= 25°C; f = 1 MHz; V
CC
CC
= 3.0V ± 10%)
= 3.3V ± 10%)
MT29F16G
MT29F32G
MT29F64G
MT29F128G
MT29F16G
MT29F32G
MT29F64G
MT29F128G
92
Device
www.DataSheet.net/
Min
70
10
10
15
20
10
30
5
5
5
5
7
7
16, 32, 64, 128Gb NAND Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
IN
1
= 0V.
1 TTL GATE and CL = 100pF
1 TTL GATE and CL = 50pF
Max
10
20
20
10
20
20
5
5
0.0V to 3.3V
Max
–
–
–
–
–
–
–
–
–
–
–
–
–
Value
Electrical Characteristics
V
5ns
CC
1
/2
©2005 Micron Technology, Inc. All rights reserved.
Unit
pF
pF
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
1, 2
1, 2
Notes
Notes
1
1
2
Datasheet pdf - http://www.DataSheet4U.co.kr/