MT29F128G08WAAC6 Micron, MT29F128G08WAAC6 Datasheet - Page 80

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MT29F128G08WAAC6

Manufacturer Part Number
MT29F128G08WAAC6
Description
NAND Flash Memory
Manufacturer
Micron
Datasheet
Interleaved BLOCK ERASE Operations
Figure 54:
PDF: 09005aef8278ee3f / Source: 09005aef81f17540
16gb_nand_mlc_l52a__2.fm -Rev. D 5/08 EN
I/Ox
R/B#
(die 1 internal)
R/B#
(die 2 internal)
R/B#
(external)
60h
Interleaved BLOCK ERASE with Status Register Monitoring
Address
Die 1
D0h
Figure 54 shows how to perform interleaved BLOCK ERASE operations. The TWO-
PLANE/MULTIPLE-DIE READ STATUS (78h) command is used to monitor the status
register for operation completion.
60h
Address
Die 2
Micron Confidential and Proprietary
D0h
80
78h
www.DataSheet.net/
Address Status
Die 1
16, 32, 64, 128Gb NAND Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
60h
Address
Command Definitions
Die 1
©2005 Micron Technology, Inc. All rights reserved.
D0h
Datasheet pdf - http://www.DataSheet4U.co.kr/

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