MT29F128G08WAAC6 Micron, MT29F128G08WAAC6 Datasheet - Page 88

• Manufacturer Part Number: MT29F128G08WAAC6
• Description: NAND Flash Memory
• Manufacturer: Micron

Error Management
Table 17:
PDF: 09005aef8278ee3f / Source: 09005aef81f17540
16gb_nand_mlc_l52a__2.fm -Rev. D 5/08 EN
Error Management Details
This NAND Flash device is specified to have the minimum number of valid blocks (N
of the total available blocks per die shown in Table 21 on page 91. This means the
devices may have blocks that are invalid when shipped from the factory. An invalid block
is one that contains at least one page that has more bad bits than can be corrected by the
minimum required ECC. Additional bad blocks may develop with use. However, the total
number of available blocks will not fall below N
uct.
Although NAND Flash memory devices may contain bad blocks, they can be used reli-
ably in systems that provide bad-block management and error-correction algorithms.
This ensures data integrity.
Internal circuitry isolates each block from other blocks, so the presence of a bad block
does not affect the operation of the rest of the NAND Flash array.
NAND Flash devices are shipped from the factory erased. The factory identifies invalid
blocks before shipping by attempting to program the bad-block mark into every location
in the first page of each invalid block. It may not be possible to program every location in
an invalid block with the bad-block mark. However, the first spare area location in each
bad block is guaranteed to contain the bad-block mark. This method is compliant with
ONFI Factory Defect Mapping requirements. See Table 17 for the bad-block mark.
System software should initially check the first spare area location on the first page of
each block prior to performing any program or erase operations on the NAND Flash
device. A bad- block table can then be created, enabling system software to map around
these areas. Factory testing is performed under worst-case conditions. Because invalid
blocks may be marginal, it may not be possible to recover the bad-block marking if the
block is erased.
Over time, some memory locations may fail to program or erase properly. In order to
ensure that data is stored properly over the life of the NAND Flash device, the following
precautions are required:
• Check status after each PROGRAM and ERASE operation.
• Under typical conditions, use the minimum required ECC shown in Table 17.
• Use bad-block management and wear-leveling algorithms.
The first block (physical block address 00h) for each CE# is guaranteed to be valid with
ECC when shipped from the factory.
Minimum number of valid blocks (N
Total available blocks per die
Minimum required ECC
First spare area location
Bad-block mark
Micron Confidential and Proprietary
Description
88
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VB
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16, 32, 64, 128Gb NAND Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
3,996
4,096
8-bit ECC per 539 bytes of data
x8: byte 4,096
x8: 00h
VB
during the endurance life of the prod-
Requirement
©2005 Micron Technology, Inc. All rights reserved.
Error Management
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