MT29F128G08WAAC6 Micron, MT29F128G08WAAC6 Datasheet - Page 64

• Manufacturer Part Number: MT29F128G08WAAC6
• Description: NAND Flash Memory
• Manufacturer: Micron

Figure 39:
Figure 40:
PDF: 09005aef8278ee3f / Source: 09005aef81f17540
16gb_nand_mlc_l52a__2.fm -Rev. D 5/08 EN
R/B#
R/B#
R/B#
R/B#
I/Ox
I/Ox
I/Ox
I/Ox
1
1
t DBSY
00h
00h
85h
85h
Address (5 cycles)
TWO-PLANE INTERNAL DATA MOVE
TWO-PLANE INTERNAL DATA MOVE with TWO-PLANE RANDOM DATA READ
1st-plane source
2nd-plane destination
Address (5 cycles)
Address (5 cycles)
1st-plane source
2nd-plane destination
Address (5 cycles)
Notes: 1. Command can be 70h or 78h.
Notes: 1. Command can be 70h or 78h.
During the serial data input for either plane, the RANDOM DATA INPUT (85h) com-
mand may be used any number of times to change the column address within that
plane. For details on this command, see “RANDOM DATA INPUT 85h” on page 38. See
the example in Figure 41 on page 65.
00h
00h
10h
optional
Address (5 cycles)
2nd-plane source
Data
Data
Address (5 cycles)
2nd-plane source
t PROG
85h
Unlimited number of repetitions
Micron Confidential and Proprietary
70h
Address (2 cycles)
1
35h
35h
t R
Status
64
85h
Data
www.DataSheet.net/
t R
1st-plane destination
Address (5 cycles)
16, 32, 64, 128Gb NAND Flash Memory
10h
Micron Technology, Inc., reserves the right to change products or specifications without notice.
85h
1st-plane destination
Address (5 cycles)
t PROG
optional
Data
Data
85h
Unlimited number of repetitions
70h
Command Definitions
1
Address (2 cycles)
11h
©2005 Micron Technology, Inc. All rights reserved.
Status
t DBSY
Data
11h
1
1
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