MT29F128G08WAAC6 Micron, MT29F128G08WAAC6 Datasheet - Page 20

• Manufacturer Part Number: MT29F128G08WAAC6
• Description: NAND Flash Memory
• Manufacturer: Micron

Figure 12:
Figure 13:
Figure 14:
PDF: 09005aef8278ee3f / Source: 09005aef81f17540
16gb_nand_mlc_l52a__2.fm -Rev. D 5/08 EN
t
I
TC vs. Rp
Fall and
OL
vs. Rp
Notes: 1.
t
Rise
T
2.
3.
4. See TC values in Figure 14 for approximate Rp value and TC.
V
I
1.20μs
1.00μs
800ns
600ns
400ns
200ns
3.50ma
3.00ma
2.50ma
2.00ma
1.50ma
1.00ma
0.50ma
0.00ma
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0.00
t
t
t
0ns
Fall and
Rise is primarily dependent on external pull-up resistor and external capacitive loading.
Fall ≈ 10ns at 3.3V.
0
–1
0
2k
t
Rise are calculated at 10 percent–90 percent points.
0
Micron Confidential and Proprietary
2000
4k
2
4000
t Fall t Rise
4
6k
6000
Rp
TC
Rp
20
0
8k
www.DataSheet.net/
8000
2
16, 32, 64, 128Gb NAND Flash Memory
I
10k
10000
OL
Micron Technology, Inc., reserves the right to change products or specifications without notice.
I
RC = TC
C = 100pF
OL
at 3.60V (MAX)
4
at 3.60V (max)
12000
12k
Vcc 3.3
6
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