MT29F128G08WAAC6 Micron, MT29F128G08WAAC6 Datasheet - Page 13
MT29F128G08WAAC6
Manufacturer Part Number
MT29F128G08WAAC6
Description
NAND Flash Memory
Manufacturer
Micron
Datasheet
1.MT29F128G08WAAC6.pdf
(115 pages)
- Current page: 13 of 115
- Download datasheet (2Mb)
Architecture
Figure 6:
Addressing
PDF: 09005aef8278ee3f / Source: 09005aef81f17540
16gb_nand_mlc_l52a__2.fm -Rev. D 5/08 EN
WE#
WP#
R/B#
I/Ox
CE#
ALE
RE#
CLE
NAND Flash Functional Block Diagram
control
Control
logic
These devices use NAND Flash electrical and command interfaces. Data, commands,
and addresses are multiplexed onto the same pins and received by I/O control circuits.
This provides a memory device with a low pin count. The commands received at the I/O
control circuits are latched by a command register and are transferred to control logic
circuits for generating internal signals to control device operations. The addresses are
latched by an address register and sent to a row decoder or a column decoder to select a
row address or a column address, respectively.
The data are transferred to or from the NAND Flash memory array, byte by byte (x8),
through a data register and a cache register. The cache register is closest to I/O control
circuits and acts as a data buffer for the I/O data, whereas the data register is closest to
the memory array and acts as a data buffer for the NAND Flash memory array operation.
The NAND Flash memory array is programmed and read in page-based operations and
is erased in block-based operations. During normal page operations, the data and cache
registers are tied together and act as a single register. During cache operations, the data
and cache registers operate independently to increase data throughput.
These devices also have a status register that reports the status of device operation.
NAND Flash devices do not contain dedicated address pins. Addresses are loaded using
a 5-cycle sequence as shown in Table 3 on page 15. See Figure 7 on page 14 for additional
memory mapping and addressing details.
I/O
Command register
Micron Confidential and Proprietary
Address register
Status register
13
www.DataSheet.net/
16, 32, 64, 128Gb NAND Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Column decode
Cache register
NAND Flash
Data register
(2 planes)
array
©2005 Micron Technology, Inc. All rights reserved.
V
CC
Architecture
V
SS
Datasheet pdf - http://www.DataSheet4U.co.kr/
Related parts for MT29F128G08WAAC6
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
VFBGA 63/I//MICRON NAND FLASH 1Gb Mass Storage
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
SYNCHRONOUS DRAM
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
Q-FLASHTM MEMORY
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
4Meg x 4, 3,3V FPM DRAM
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
4Meg x 4, 3,3V FPM DRAM
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
4Meg x 4 banks, EDO DRAM, 3.3V, standard refresh, 50ns
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
4Meg x 4 banks, EDO DRAM, 3.3V, standard refresh, 50ns
Manufacturer:
Micron Semiconductor Products
Datasheet:
Part Number:
Description:
4Meg x 4 banks, EDO DRAM, 3.3V, standard refresh, 60ns
Manufacturer:
Micron Semiconductor Products
Datasheet: