MT29F128G08WAAC6 Micron, MT29F128G08WAAC6 Datasheet - Page 53

• Manufacturer Part Number: MT29F128G08WAAC6
• Description: NAND Flash Memory
• Manufacturer: Micron

Table 15:
Figure 32:
PDF: 09005aef8278ee3f / Source: 09005aef81f17540
16gb_nand_mlc_l52a__2.fm -Rev. D 5/08 EN
Subfeature
Parameter
P1
P2
P3
P4
R/B# pull-down
strength
Reserved
Reserved
Reserved
Feature Address 81h: Programmable R/B# Pull-down Strength
GET FEATURES Operation
WE#
R/B#
I/Ox
CE#
ALE
RE#
CLE
Options
Full (default)
Three-quarters
One-half
One-quarter
Notes: 1. The programmable R/B# pull-down strength feature address is used to change the default
Notes: 1. P1–P4 are the subfeature parameters to be read from the specified feature address (FA).
EEh
R/B# pull-down strength. R/B# pull-down strength should be selected based on expected
loading of R/B#. The four supported pull-down strength settings are shown. The default
pull-down strength is full strength. The device returns to the default pull-down strength
when the device is power cycled.
I/O7
Feature address,
1 cycle
FA
Micron Confidential and Proprietary
I/O6
t FEAT
I/O5
Reserved (0)
Reserved (0)
Reserved (0)
Reserved (0)
53
I/O4
Reserved (0)
Reserved (0)
Reserved (0)
www.DataSheet.net/
P1
1
16, 32, 64, 128Gb NAND Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
I/O3
P2
I/O2
P3
I/O1
0
0
1
1
Command Definitions
©2005 Micron Technology, Inc. All rights reserved.
I/O0
P4
0
1
0
1
Value
00h
01h
02h
03h
00h
00h
00h
Notes
1
Datasheet pdf - http://www.DataSheet4U.co.kr/