MT29F128G08WAAC6 Micron, MT29F128G08WAAC6 Datasheet - Page 19

• Manufacturer Part Number: MT29F128G08WAAC6
• Description: NAND Flash Memory
• Manufacturer: Micron

Figure 10:
Figure 11:
PDF: 09005aef8278ee3f / Source: 09005aef81f17540
16gb_nand_mlc_l52a__2.fm -Rev. D 5/08 EN
Time Constants
READY/BUSY# Open Drain
status indication for the 32Gb enabled by CE4#. R/B#, R/B2#, R/B3#, and R/B4# can be
tied together, or they can be used separately to provide independent indications for each
32Gb section.
The combination of Rp and capacitive loading of the R/B# circuit determines the rise
time of the R/B# pin. The actual value used for Rp depends on the system timing
requirements. Large values of Rp cause R/B# to be delayed significantly. At the 10 to 90
percent points on the R/B# waveform, rise time is approximately two time constants
(TC).
Where R = Rp (resistance of pull-up resistor), and C = total capacitive load.
The fall time of the R/B# signal is determined mainly by the output impedance of the
R/B# pin and the total load capacitance.
Refer to Figures 12 and 13 on page 20, which depict approximate Rp values using a cir-
cuit load of 100pF.
The minimum value for Rp is determined by the output drive capability of the R/B# sig-
nal, the output voltage swing, and V
Where ΣI
GND
V
CC
L
Rp MIN
is the sum of the input currents of all devices tied to the R/B# pin.
I
OL
(
Micron Confidential and Proprietary
Device
)
=
V
---------------------------------------------------------------
CC
R/B#
Open drain output
(
MAX
TC
Rp
I
19
OL
=
) V
www.DataSheet.net/
+
–
R
ΣI
CC
×
OL
L
16, 32, 64, 128Gb NAND Flash Memory
C
.
Micron Technology, Inc., reserves the right to change products or specifications without notice.
(
MAX
)
=
-------------------------- -
8
mA
3.2
+
V
ΣI
L
©2005 Micron Technology, Inc. All rights reserved.
Bus Operation
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