MT29F128G08WAAC6 Micron, MT29F128G08WAAC6 Datasheet - Page 21
MT29F128G08WAAC6
Manufacturer Part Number
MT29F128G08WAAC6
Description
NAND Flash Memory
Manufacturer
Micron
Datasheet
1.MT29F128G08WAAC6.pdf
(115 pages)
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Table 5:
PDF: 09005aef8278ee3f / Source: 09005aef81f17540
16gb_nand_mlc_l52a__2.fm -Rev. D 5/08 EN
CLE
H
H
X
X
X
X
X
L
L
L
L
Mode Selection
ALE
H
H
X
X
X
X
X
L
L
L
L
Notes: 1. WP# should be biased to CMOS HIGH or LOW for standby.
2. Mode selection settings for this table: H = Logic level HIGH; L = Logic level LOW;
CE#
H
X
X
X
X
L
L
L
L
L
L
X = V
IH
or V
WE#
Micron Confidential and Proprietary
H
H
X
X
X
X
IL
.
RE#
H
H
H
H
H
H
X
X
X
X
21
www.DataSheet.net/
0V/V
WP#
16, 32, 64, 128Gb NAND Flash Memory
X
X
H
H
H
X
X
H
H
L
Micron Technology, Inc., reserves the right to change products or specifications without notice.
CC 1
Mode
Read mode
Write mode
Data input
Sequential read and data output
During read (busy)
During program (busy)
During erase (busy)
Write protect
Standby
©2005 Micron Technology, Inc. All rights reserved.
Command input
Address input
Command input
Address input
Bus Operation
Datasheet pdf - http://www.DataSheet4U.co.kr/
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