MT29F128G08WAAC6 Micron, MT29F128G08WAAC6 Datasheet - Page 91

• Manufacturer Part Number: MT29F128G08WAAC6
• Description: NAND Flash Memory
• Manufacturer: Micron

Table 20:
Table 21:
PDF: 09005aef8278ee3f / Source: 09005aef81f17540
16gb_nand_mlc_l52a__2.fm -Rev. D 5/08 EN
Parameter
Parameter
Sequential read current
Program current
Erase current
Current during first RESET
command after power on
Standby current (TTL)
Standby current (CMOS)
Input leakage current
Output leakage current
Staggered power-up current
Input high voltage
Input low voltage (all inputs)
Output high voltage
Output low voltage
Output low current (R/B#)
Valid block number
Valid Blocks
Device DC and Operating Characteristics
Notes: 1. Test conditions for V
Notes: 1. Invalid blocks are blocks that contain one or more bad bits beyond ECC. The device may
2. DC characteristics may need to be relaxed if R/B# pull-down strength is not set to “full.”
3. Measurement is taken with 1ms averaging intervals and begins after V
4. This is for single-die operations. It can be greater for interleaved die operations.
2. Block 00h (the first block per each chip enable) is guaranteed to be valid with ECC when
3. Each 16Gb section has a maximum of 100 invalid blocks.
4. Each 32Gb section has a maximum of 200 invalid blocks, not to exceed 100 invalid blocks
See Table 15 on page 53 for additional details.
(MIN).
contain bad blocks upon shipment. Additional bad blocks may develop over time; how-
ever, the total number of available blocks will not drop below N
life of the device. Do not erase or program blocks marked invalid by the factory.
shipped from the factory.
for each NAND Flash die.
t
I/Ox, CE#, CLE, ALE, WE#,
RC =
Line capacitance = 0.1µF
CE# = V
V
Rise time = 1ms
V
t
OUT
WP# = 0V/V
WP# = 0V/V
Symbol
RC (MIN); CE# = V
I
IN
Conditions
OH
I
I
OL
V
OUT
CE# = V
RE#, WP#
N
= 0V to V
OL
Micron Confidential and Proprietary
= 0V to V
= –400µA
VB
= 2.1mA
= 0.4V
= 0mA
CC
–
–
–
–
– 0.2V;
IH
;
CC
CC
CC
CC
OH
and V
IL
MT29F16G
MT29F32G
MT29F64G
MT29F128G
;
91
Device
OL
I
Symbol
OL
www.DataSheet.net/
.
I
I
I
I
V
I
I
V
V
CC
CC
CC
CC
I
V
SB
SB
I
(R/B#)
I
LO
ST
OH
OL
LI
IH
IL
1
2
1
2
3
4
16, 32, 64, 128Gb NAND Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
0.8 x V
0.67 x
15,984
31,968
Min
–0.3
V
3,996
7,992
Min
–
–
–
–
–
–
–
–
–
–
8
CC
CC
Typ
20
20
20
10
10
Electrical Characteristics
–
–
–
–
–
–
–
–
–
16,384
32,768
4,096
8,192
Max
©2005 Micron Technology, Inc. All rights reserved.
V
0.2 x V
VB
10 per
CC
Max
±10
±10
die
0.4
30
30
30
10
50
during the endurance
1
–
–
+ 0.3
CC
CC
Blocks
Blocks
Blocks
Blocks
Unit
reaches V
Unit
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
V
V
V
V
Notes
1, 2, 3
1, 2, 4
1, 2, 4
Notes
1, 2
CC
4
4
4
4
3
1
1
2
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