HD64F7047F50 Renesas Electronics America, HD64F7047F50 Datasheet - Page 355

IC SUPERH MCU FLASH 256K 100QFP

HD64F7047F50

Manufacturer Part Number
HD64F7047F50
Description
IC SUPERH MCU FLASH 256K 100QFP
Manufacturer
Renesas Electronics America
Series
SuperH® SH7047r
Datasheet

Specifications of HD64F7047F50

Core Processor
SH-2
Core Size
32-Bit
Speed
50MHz
Connectivity
CAN, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
53
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
12K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 16x10b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-

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10.9.4
Input Level Detection Operation: If the input conditions set by the ICSR1 occur on any of the
POE pins, all high-current pins become high-impedance state. However, only when the general
input/output function or MTU function is selected, the large-current pin is in the high-impedance
state.
1. Falling Edge Detection
2. Low-Level Detection
Sampling
clock
POE input
PE9/
TIOC3B
When low level is
sampled at all points
When high level is
sampled at least once
Note: * Other large-current pins (PE11/TIOC3D, PE12/TIOC4A, PE13/TIOC4B/MRES, PE14/TIOC4C,
When a change from high to low level is input to the POE pins.
Figure 10.115 shows the low-level detection operation. Sixteen continuous low levels are
sampled with the sampling clock established by the ICSR1. If even one high level is detected
during this interval, the low level is not accepted.
Furthermore, the timing when the large-current pins enter the high-impedance state from the
sampling clock is the same in both falling-edge detection and in low-level detection.
PE15/TIOC4D/IRQOUT) also go to the high-impedance state at the same timing.
Operation
1
1
Figure 10.115 Low-Level Detection Operation
8/16/128 clock
cycles
2
2
3
Rev. 2.00, 09/04, page 313 of 720
16
13
Flag not set
High-impedance
state*
Flag set
(POE received)

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