HD64F7047F50 Renesas Electronics America, HD64F7047F50 Datasheet - Page 609

IC SUPERH MCU FLASH 256K 100QFP

HD64F7047F50

Manufacturer Part Number
HD64F7047F50
Description
IC SUPERH MCU FLASH 256K 100QFP
Manufacturer
Renesas Electronics America
Series
SuperH® SH7047r
Datasheet

Specifications of HD64F7047F50

Core Processor
SH-2
Core Size
32-Bit
Speed
50MHz
Connectivity
CAN, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
53
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
12K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 16x10b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-

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19.8.2
When erasing flash memory, the erase/erase-verify flowchart shown in figure 19.10 should be
followed.
1. Prewriting (setting erase block data to all 0s) is not necessary.
2. Erasing is performed in block units. Make only a single-bit specification in the erase block
3. The time during which the E bit is set to 1 is the flash memory erase time.
4. The watchdog timer (WDT) is set to prevent overerasing due to program runaway, etc. An
5. For a dummy write to a verify address, write 1-byte data H'FF to the read address. Verify data
6. If the read data is not erased successfully, set erase mode again, and repeat the erase/erase-
19.8.3
All interrupts, including the NMI interrupt, are disabled while flash memory is being programmed
or erased, or while the boot program is executing, for the following three reasons:
1. An interrupt during programming/erasing may cause a violation of the programming or erasing
2. If an interrupt exception handling starts before the vector address is written or during
3. If an interrupt occurs during boot program execution, normal boot mode sequence cannot be
register 1 (EBR1) and the erase block register 2 (EBR2). To erase multiple blocks, each block
must be erased in turn.
overflow cycle of approximately 19.8 ms is allowed.
can be read in longwords from the address to which a dummy write was performed.
verify sequence as before. The number of repetitions of the erase/erase-verify sequence should
not exceed the maximum number of erasing (N).
algorithm, with the result that normal operation cannot be assured.
programming/erasing, a correct vector cannot be fetched and the CPU malfunctions.
carried out.
Erase/Erase-Verify Mode
Interrupt Handling when Programming/Erasing Flash Memory
Rev. 2.00, 09/04, page 567 of 720

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