DF2166VT33WV Renesas Electronics America, DF2166VT33WV Datasheet - Page 142
DF2166VT33WV
Manufacturer Part Number
DF2166VT33WV
Description
MCU 16BIT FLASH 3V 512K 144-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheet
1.HS2168EPI61H-U.pdf
(876 pages)
Specifications of DF2166VT33WV
Core Processor
H8S/2000
Core Size
16-Bit
Speed
33MHz
Connectivity
I²C, IrDA, LPC, SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
106
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
40K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-TQFP, 144-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
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5.7.2
The instructions that disable interrupts are LDC, ANDC, ORC, and XORC. After any of these
instructions are executed, all interrupts including NMI are disabled and the next instruction is
always executed. When the I bit or UI bit is set by one of these instructions, the new value
becomes valid two states after execution of the instruction ends.
5.7.3
Interrupt operation differs between the EEPMOV.B instruction and the EEPMOV.W instruction.
With the EEPMOV.B instruction, an interrupt request (including NMI) issued during the transfer
is not accepted until the move is completed.
With the EEPMOV.W instruction, if an interrupt request is issued during the transfer, interrupt
exception handling starts at a break in the transfer cycle. The PC value saved on the stack in this
case is the address of the next instruction. Therefore, if an interrupt is generated during execution
of an EEPMOV.W instruction, the following coding should be used.
5.7.4
Since IRQnF may be set to 1 according to the pin status after a reset, the ISR16 and the ISR
should be read after a reset, and then write 0 in IRQnF (n = 15 to 0).
Rev. 3.00, 03/04, page 100 of 830
L1:
Instructions that Disable Interrupts
IRQ Status Registers (ISR16, ISR)
Interrupts during Execution of EEPMOV Instruction
EEPMOV.W
MOV.W
BNE
R4,R4
L1
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