HD6412373R RENESAS [Renesas Technology Corp], HD6412373R Datasheet - Page 971

• Manufacturer Part Number: HD6412373R
• Description: Renesas 16-Bit Single-Chip Microcomputer H8S Family/H8S/2300 Series
• Manufacturer: RENESAS [Renesas Technology Corp]

16. Determine the FPFR (general-purpose register R0L) value returned by the programming
17. After programming finishes, clear FKEY and specify software protection.
⎯ Only perform programming finished processing once per block. Even if multiple 128-byte
⎯ Programming finished processing should be performed on all blocks containing areas that
⎯ Programming finished processing should be performed immediately after programming of
program.
If this LSI is restarted by a power-on reset immediately after user MAT programming has
finished, secure a reset period (period of RES = 0) that is at least as long as normal 100 μs.
Programming finished area
programming operations have been performed to the same block, programming finished
processing should only be carried out once. (Due not perform programming finished
processing multiple times.) If it is necessary to reprogram blocks within a previously
programmed area on which programming finished processing has been performed, first
erase the blocks in question and then reprogram them.
have been programmed after initialization processing. For example, if programming
finished processing is to be carried out once after programming blocks EB1 to EB3,
programming finished processing should be performed individually on EB1, EB2, and
EB3.
the necessary data has completed. Caution is necessary because if an operation such as
initialization processing, internal program downloading, rewriting an area of RAM that is a
download destination, or MAT switching is performed before programming finished
processing, programming will not take place correctly.
:
:
EB9
EB10
EB11
EB12
Before reprogramming erased blocks containing a programming
finished area (EB10 and EB11), the corresponding erased
blocks (EB10 and EB11) should be erased.
Section 21 Flash Memory (0.18-μm F-ZTAT Version)
Rev.7.00 Mar. 18, 2009 page 903 of 1136
REJ09B0109-0700