MA180025 Microchip Technology, MA180025 Datasheet - Page 94

MODULE PLUG-IN PIC18F87J90 PIM

MA180025

Manufacturer Part Number
MA180025
Description
MODULE PLUG-IN PIC18F87J90 PIM
Manufacturer
Microchip Technology
Series
PIC®r
Datasheets

Specifications of MA180025

Accessory Type
Plug-In Module (PIM) - PIC18F87J90
Product
Microcontroller Modules
Silicon Manufacturer
Microchip
Core Architecture
PIC
Core Sub-architecture
PIC18
Silicon Core Number
PIC18F
Silicon Family Name
PIC18FxxJxx
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With/related Products
PICDEM LCD 2 Demonstration Board (DM163030)
For Use With
DM163030 - KIT DEV PICDEM LCD2
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MA180025
Manufacturer:
Microchip Technology
Quantity:
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Part Number:
MA180025
Manufacturer:
MICROCHIP
Quantity:
12 000
PIC18F87J90 FAMILY
7.4
The minimum erase block is 512 words or 1024 bytes.
Only through the use of an external programmer, or
through ICSP control, can larger blocks of program
memory be bulk erased. Word erase in the Flash array
is not supported.
When initiating an erase sequence from the micro-
controller itself, a block of 1024 bytes of program
memory is erased. The Most Significant 12 bits of the
TBLPTR<21:10> point to the block being erased. The
TBLPTR<9:0> bits are ignored.
The EECON1 register commands the erase operation.
The WREN bit must be set to enable write operations.
The FREE bit is set to select an erase operation. For
protection, the write initiate sequence for EECON2
must be used.
A long write is necessary for erasing the internal Flash.
Instruction execution is halted while in a long write
cycle. The long write will be terminated by the internal
programming timer.
EXAMPLE 7-2:
DS39933D-page 94
Required
Sequence
Erasing Flash Program Memory
ERASE
ERASING FLASH PROGRAM MEMORY
MOVLW
MOVWF
MOVLW
MOVWF
MOVLW
MOVWF
BSF
BSF
BCF
MOVLW
MOVWF
MOVLW
MOVWF
BSF
BSF
CODE_ADDR_UPPER
TBLPTRU
CODE_ADDR_HIGH
TBLPTRH
CODE_ADDR_LOW
TBLPTRL
EECON1, WREN
EECON1, FREE
INTCON, GIE
55h
EECON2
0AAh
EECON2
EECON1, WR
INTCON, GIE
; load TBLPTR with the base
; address of the memory block
; enable Erase operation
; disable interrupts
; write 55h
; write 0AAh
; start erase (CPU stall)
; re-enable interrupts
7.4.1
The sequence of events for erasing a block of internal
program memory location is:
1.
2.
3.
4.
5.
6.
7.
8.
Load Table Pointer register with address being
erased.
Set the WREN and FREE bits (EECON1<2,4>)
to enable the erase operation.
Disable interrupts.
Write 55h to EECON2.
Write 0AAh to EECON2.
Set the WR bit. This will begin the erase cycle.
The CPU will stall for the duration of the erase
for T
Re-enable interrupts.
IW
FLASH PROGRAM MEMORY
ERASE SEQUENCE
(see parameter D133B).
 2010 Microchip Technology Inc.

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