DF2328BVF25V Renesas Electronics America, DF2328BVF25V Datasheet - Page 1108
DF2328BVF25V
Manufacturer Part Number
DF2328BVF25V
Description
IC H8S MCU FLASH 256K 128QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets
1.HEWH8E10A.pdf
(19 pages)
2.D12312SVTE25V.pdf
(341 pages)
3.D12322RVF25V.pdf
(1304 pages)
Specifications of DF2328BVF25V
Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
87
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
128-QFP
For Use With
EDK2329 - DEV EVALUATION KIT H8S/2329
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Other names
HD64F2328BVF25V
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2328BVF25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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Appendix B Internal I/O Registers
Rev.6.00 Sep. 27, 2007 Page 1076 of 1268
REJ09B0220-0600
9.
10. Only 0 can be written to bits 7 to 5, to clear the flags.
11. For information on writing, see section 13.2.4, Notes on Register Access.
12. Only 0 can be written to bit 7, to clear the flag.
13. Flash memory registers selection is performed by means of the FLSHE bit in system
14. In modes in which the on-chip flash memory is disabled, a read will return H'00, and
15. In the H8S/2328B F-ZTAT and H8S/2326 F-ZTAT, the initial value when a high level is
16. In the H8S/2328B F-ZTAT, this register is initialized to H'00 when a low level is input to
17. FLMCR1, FLMCR2, EBR1, and EBR2 are 8-bit registers. Only byte access can be
18. The SYSCR2 register can only be used in the F-ZTAT versions. In the mask ROM
19. Value of bits 3 to 0.
20. The initial value depends on the mode.
21. Value of bits 4 to 0.
22. Valid only in the F-ZTAT versions.
If the pulse output group 2 and pulse output group 3 output triggers are the same
according to the PCR setting, the NDRH address will be H'FF4C, and if different, the
address of NDRH for group 2 will be H'FF4E, and that for group 3 will be H'FF4C.
Similarly, if the pulse output group 0 and pulse output group 1 output triggers are the
same according to the PCR setting, the NDRL address will be H'FF4D, and if different,
the address of NDRL for group 0 will be H'FF4F, and that for group 1 will be H'FF4D.
control register 2 (SYSCR2).
writes are invalid. Writes are also disabled when the FWE bit in FLMCR1 is cleared
to 0 (except in the H8S/2329B F-ZTAT).
input to the FWE is H'80. The initial value in the H8S/2329B F-ZTAT is H'80.
the FWE pin, or when a high level is input to the FWE pin when the SWE bit in
FLMCR1 is not set.
In the H8S/2329B F-ZTAT, this register is initialized to H'00 when the SWE bit in
FLMCR1 is not set.
In the H8S/2326 F-ZTAT, bits EB11 to EB0 are initialized to 0 when a low level is input
to the FWE pin, or a high level is input and the SWE1 bit in FLMCR1 is not set. Bits
EB15 to EB12 are initialized to 0 when a low level is input to the FWE pin, or a high
level is input and the SWE2 bit is not set.
used on these registers, with the access requiring two states. (Applies to the
H8S/2329B F-ZTAT, H8S/2328B F-ZTAT, and H8S/2326 F-ZTAT.)
versions this register will return an undefined value if read, and cannot be written to.
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