DF2328BVF25V Renesas Electronics America, DF2328BVF25V Datasheet - Page 797

• Manufacturer Part Number: DF2328BVF25V
• Description: IC H8S MCU FLASH 256K 128QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2328BVF25V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 87
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 128-QFP
• For Use With: EDK2329 - DEV EVALUATION KIT H8S/2329
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Other names: HD64F2328BVF25V

19.7
In the on-board programming modes, flash memory programming and erasing is performed by
software, using the CPU. There are four flash memory operating modes: program mode, erase
mode, program-verify mode, and erase-verify mode. Transitions to these modes can be made by
setting the PSU, ESU, P, E, PV, and EV bits in FLMCR1.
The flash memory cannot be read while being programmed or erased. Therefore, the program that
controls flash memory programming/erasing (the programming control program) should be
located and executed in on-chip RAM or external memory. When the program is located in
external memory, an instruction for programming the flash memory and the following instruction
should be located in on-chip RAM. The DMAC or DTC should not be activated before or after the
instruction for programming the flash memory is executed.
Notes: 1. Operation is not guaranteed if setting/resetting of the SWE, ESU, PSU, EV, PV, E, and
19.7.1
Follow the procedure shown in the program/program-verify flowchart in figure 19.14 to write data
or programs to flash memory. Performing program operations according to this flowchart will
enable data or programs to be written to flash memory without subjecting the device to voltage
stress or sacrificing program data reliability. Programming should be carried out 128 bytes at a
time.
For the wait times (x, y, z1, z2, z3 α, ß, γ, ε, η, and θ) after bits are set or cleared in flash memory
control register 1 (FLMCR1) and the maximum number of programming operations (N), see
section 22.2.6, Flash Memory Characteristics.
Following the elapse of (x) µs or more after the SWE bit is set to 1 in flash memory control
register 1 (FLMCR1), 128-byte program data is stored in the program data area and reprogram
data area, and the 128-byte data in the reprogram data area is written consecutively to the write
addresses. The lower 8 bits of the first address written to must be H'00 or H'80. 128 consecutive
byte data transfers are performed. The program address and program data are latched in the flash
memory. A 128-byte data transfer must be performed even if writing fewer than 128 bytes; in this
case, H'FF data must be written to the extra addresses.
Next, the watchdog timer is set to prevent overprogramming in the event of program runaway, etc.
Set a value greater than (y + z2 + α + β) µs as the WDT overflow period. After this, preparation
for program mode (program setup) is carried out by setting the PSU bit in FLMCR1, and after the
2. Perform programming in the erased state. Do not perform additional programming on
Programming/Erasing Flash Memory
Program Mode
P bits in FLMCR1 is executed by a program in flash memory.
previously programmed addresses.
Rev.6.00 Sep. 27, 2007 Page 765 of 1268
REJ09B0220-0600
Section 19 ROM