DF2328BVF25V Renesas Electronics America, DF2328BVF25V Datasheet - Page 871

• Manufacturer Part Number: DF2328BVF25V
• Description: IC H8S MCU FLASH 256K 128QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2328BVF25V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 87
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 128-QFP
• For Use With: EDK2329 - DEV EVALUATION KIT H8S/2329
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Other names: HD64F2328BVF25V

AC Characteristics
Table 19.41 AC Characteristics in Auto-Erase Mode
Conditions: V
Item
Command write cycle
CE hold time
CE setup time
Data hold time
Data setup time
Write pulse width
Status polling start time
Status polling access time
Memory erase time
WE rise time
WE fall time
Erase setup time
Erase end setup time
I/O
A
5
18
to I/O
FWE
to A
I/O
I/O
WE
OE
CE
0
7
6
0
CC
= 3.3 V ±0.3 V, V
t
ens
Figure 19.53 Auto-Erase Mode Timing Waveforms
t
ces
t
f
t
ds
t
wep
H'20
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
nxtc
ceh
ces
dh
ds
wep
ests
spa
erase
r
f
ens
enh
t
t
ceh
SS
r
t
dh
= 0 V, T
t
nxtc
a
= 25°C ±5°C
Min
20
0
0
50
50
70
1
—
100
—
—
100
100
H'20
Erase end identifi-
cation signal
Erase normal end
confirmation signal
t
Rev.6.00 Sep. 27, 2007 Page 839 of 1268
ests
t
erase
t
spa
Max
—
—
—
—
—
—
—
150
40000
30
30
—
—
H'00
t
enh
t
nxtc
REJ09B0220-0600
Section 19 ROM
Unit
µs
ns
ns
ns
ns
ns
ms
ns
ms
ns
ns
ns
ns