DF2328BVF25V Renesas Electronics America, DF2328BVF25V Datasheet - Page 215

IC H8S MCU FLASH 256K 128QFP

DF2328BVF25V

Manufacturer Part Number
DF2328BVF25V
Description
IC H8S MCU FLASH 256K 128QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets

Specifications of DF2328BVF25V

Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
87
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
128-QFP
For Use With
EDK2329 - DEV EVALUATION KIT H8S/2329
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Other names
HD64F2328BVF25V

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2328BVF25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
6.5
6.5.1
When the chip is in advanced mode, external space areas 2 to 5 can be designated as DRAM
space, and DRAM interfacing performed. With the DRAM interface, DRAM can be directly
connected to the chip. A DRAM space of 2, 4, or 8 Mbytes can be set by means of bits RMTS2 to
RMTS0 in BCRH. Burst operation is also possible, using fast page mode.
6.5.2
Areas 2 to 5 are designated as DRAM space by setting bits RMTS2 to RMTS0 in BCRH. The
relation between the settings of bits RMTS2 to RMTS0 and DRAM space is shown in table 6.5.
Possible DRAM space settings are: one area (area 2), two areas (areas 2 and 3), and four areas
(areas 2 to 5).
Table 6.5
RMTS2
0
DRAM Interface (Not supported in the H8S/2321)
Overview
Setting DRAM Space
RMTS1
0
1
Settings of Bits RMTS2 to RMTS0 and Corresponding DRAM Spaces
RMTS0
1
0
1
Area 5
Normal space
Normal space
DRAM space
Area 4
Rev.6.00 Sep. 27, 2007 Page 183 of 1268
Area 3
DRAM space
Section 6 Bus Controller
REJ09B0220-0600
Area 2
DRAM space

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