DF2328BVF25V Renesas Electronics America, DF2328BVF25V Datasheet - Page 238

IC H8S MCU FLASH 256K 128QFP

DF2328BVF25V

Manufacturer Part Number
DF2328BVF25V
Description
IC H8S MCU FLASH 256K 128QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets

Specifications of DF2328BVF25V

Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
87
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
128-QFP
For Use With
EDK2329 - DEV EVALUATION KIT H8S/2329
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Other names
HD64F2328BVF25V

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2328BVF25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 6 Bus Controller
Usage Notes: When DRAM space * is accessed, the ICIS0 and ICIS1 bit settings are disabled. In
the case of consecutive reads between different areas, for example, if the second access is a
DRAM access * , only a T
cycle is inserted, and a T
cycle is not. The timing in this case is shown
p
I
in figure 6.34.
However, in burst access in RAS down mode these settings are enabled, and an idle cycle is
inserted. The timing in this case is shown in figures 6.35 (a) and (b).
Note: * The DRAM interface is not supported in the H8S/2321.
External read
DRAM space read
T
T
T
T
T
T
T
1
2
3
p
r
c1
c2
φ
Address bus
RD
Data bus
Figure 6.34 Example of DRAM Access after External Read
Rev.6.00 Sep. 27, 2007 Page 206 of 1268
REJ09B0220-0600

Related parts for DF2328BVF25V