DF2328BVF25V Renesas Electronics America, DF2328BVF25V Datasheet - Page 764

• Manufacturer Part Number: DF2328BVF25V
• Description: IC H8S MCU FLASH 256K 128QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2328BVF25V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 87
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 128-QFP
• For Use With: EDK2329 - DEV EVALUATION KIT H8S/2329
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Other names: HD64F2328BVF25V

Section 18 RAM
18.1.2
The on-chip RAM is controlled by SYSCR. Table 18.1 shows the address and initial value of
SYSCR.
Table 18.1 RAM Register
Name
System control register
Note: * Lower 16 bits of the address.
18.2
18.2.1
The on-chip RAM is enabled or disabled by the RAME bit in SYSCR. For details of other bits in
SYSCR, see section 5.2.1, System Control Register (SYSCR).
Bit 0—RAM Enable (RAME): Enables or disables the on-chip RAM. The RAME bit is
initialized when the reset state is released. It is not initialized in software standby mode.
Bit 0
RAME
0
1
Rev.6.00 Sep. 27, 2007 Page 732 of 1268
REJ09B0220-0600
Bit
Initial value :
R/W
Register Configuration
Register Descriptions
System Control Register (SYSCR)
Description
On-chip RAM is disabled
On-chip RAM is enabled
:
:
R/W
—
7
0
—
—
6
0
Abbreviation
SYSCR
INTM1
R/W
5
0
INTM0
R/W
4
0
R/W
R/W
NMIEG
R/W
3
0
Initial Value
H'01
LWROD IRQPAS
R/W
2
0
R/W
1
0
Address *
H'FF39
(Initial value)
RAME
R/W
0
1