DF2328BVF25V Renesas Electronics America, DF2328BVF25V Datasheet - Page 765

IC H8S MCU FLASH 256K 128QFP

DF2328BVF25V

Manufacturer Part Number
DF2328BVF25V
Description
IC H8S MCU FLASH 256K 128QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets

Specifications of DF2328BVF25V

Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
87
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
128-QFP
For Use With
EDK2329 - DEV EVALUATION KIT H8S/2329
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Other names
HD64F2328BVF25V

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2328BVF25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
18.3
When the RAME bit is set to 1, accesses to addresses H'FFDC00 to H'FFFBFF are directed to the
on-chip RAM. When the RAME bit is cleared to 0, the off-chip address space is accessed.
Since the on-chip RAM is connected to the CPU by an internal 16-bit data bus, it can be written to
and read in byte or word units. Each type of access can be performed in one state.
Even addresses use the upper 8 bits, and odd addresses use the lower 8 bits. Word data must start
at an even address.
Note: The amount of on-chip RAM differs depending on the product. Refer to section 3.5,
18.4
DTC register information can be located in addresses H'FFF800 to H'FFFBFF. When the DTC is
used, the RAME bit must not be cleared to 0.
Memory Map in Each Operation Mode, for details.
Operation
Usage Note
Rev.6.00 Sep. 27, 2007 Page 733 of 1268
REJ09B0220-0600
Section 18 RAM

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