DF2328BVF25V Renesas Electronics America, DF2328BVF25V Datasheet - Page 909

• Manufacturer Part Number: DF2328BVF25V
• Description: IC H8S MCU FLASH 256K 128QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2328BVF25V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 87
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 128-QFP
• For Use With: EDK2329 - DEV EVALUATION KIT H8S/2329
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Other names: HD64F2328BVF25V

Notes: Do not apply a constant high level to the FWE pin. A high level should be applied to
the FWE pin only when programming or erasing flash memory. Also, while a high level
is applied to the FWE pin, the watchdog timer should be activated to prevent
overprogramming or overerasing due to program runaway, etc.
* For further information on FWE application and disconnection, see section 19.30,
Figure 19.70 Example of User Program Mode Execution Procedure
Flash Memory Programming and Erasing Precautions.
Execute programming/erase control
Write FWE assessment program
and transfer program
(and programming/erase control
program if necessary) beforehand
program (flash memory rewriting)
Branch to application program
Branch to programming/erase
MD2, MD1, MD0 = 101 or 111
control program in RAM area
Transfer programming/erase
control program to RAM
in flash memory
FWE = high*
Clear FWE*
Reset start
Rev.6.00 Sep. 27, 2007 Page 877 of 1268
REJ09B0220-0600
Section 19 ROM