SAM7SE256 Atmel Corporation, SAM7SE256 Datasheet - Page 106

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SAM7SE256

Manufacturer Part Number
SAM7SE256
Description
Manufacturer
Atmel Corporation
Datasheets

Specifications of SAM7SE256

Flash (kbytes)
256 Kbytes
Pin Count
144
Max. Operating Frequency
48 MHz
Cpu
ARM7TDMI
Hardware Qtouch Acquisition
No
Max I/o Pins
88
Ext Interrupts
88
Usb Transceiver
1
Usb Speed
Full Speed
Usb Interface
Device
Spi
1
Twi (i2c)
1
Uart
3
Ssc
1
Graphic Lcd
No
Video Decoder
No
Camera Interface
No
Adc Channels
8
Adc Resolution (bits)
10
Adc Speed (ksps)
384
Resistive Touch Screen
No
Temp. Sensor
No
Crypto Engine
No
Sram (kbytes)
32
Self Program Memory
NO
External Bus Interface
1
Dram Memory
sdram
Nand Interface
Yes
Picopower
No
Temp. Range (deg C)
-40 to 85
I/o Supply Class
1.8/3.3
Operating Voltage (vcc)
3.0 to 3.6
Fpu
No
Mpu / Mmu
Yes / No
Timers
3
Output Compare Channels
3
Input Capture Channels
3
Pwm Channels
4
32khz Rtc
Yes
Calibrated Rc Oscillator
No
19.2.4.1
106
SAM7SE512/256/32
Flash Programming
Figure 19-5. Command State Chart
In order to guarantee valid operations on the Flash memory, the field Flash Microsecond Cycle
Number (FMCN) in the Flash Mode Register MC_FMR must be correctly programmed (see
Flash Mode Register” on page
Several commands can be used to program the Flash.
The Flash technology requires that an erase must be done before programming. The entire
memory plane can be erased at the same time, or a page can be automatically erased by clear-
ing the NEBP bit in the MC_FMR register before writing the command in the MC_FCR register.
By setting the NEBP bit in the MC_FMR register, a page can be programmed in several steps if
it has been erased before (see
Write FCMD and PAGENB in MC_FCR
Check if PROGE flag set
Read Status: MC_FSR
Check if FRDY flag set
Read Status: MC_FSR
Check if FRDY flag set
Check if LOCKE flag set
Command Successful
Yes
Yes
No
No
111).
Figure
19-6).
No
No
Yes
Yes
Locking region violation
Bad keyword violation and/or Invalid command
6222F–ATARM–14-Jan-11
“MC

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