SAM7SE256 Atmel Corporation, SAM7SE256 Datasheet - Page 107

• Manufacturer Part Number: SAM7SE256
• Manufacturer: Atmel Corporation

Specifications of SAM7SE256

• Flash (kbytes): 256 Kbytes
• Pin Count: 144
• Max. Operating Frequency: 48 MHz
• Cpu: ARM7TDMI
• Hardware Qtouch Acquisition: No
• Max I/o Pins: 88
• Ext Interrupts: 88
• Usb Transceiver: 1
• Usb Speed: Full Speed
• Usb Interface: Device
• Spi: 1
• Twi (i2c): 1
• Uart: 3
• Ssc: 1
• Graphic Lcd: No
• Video Decoder: No
• Camera Interface: No
• Adc Channels: 8
• Adc Resolution (bits): 10
• Adc Speed (ksps): 384
• Resistive Touch Screen: No
• Temp. Sensor: No
• Crypto Engine: No
• Sram (kbytes): 32
• Self Program Memory: NO
• External Bus Interface: 1
• Dram Memory: sdram
• Nand Interface: Yes
• Picopower: No
• Temp. Range (deg C): -40 to 85
• I/o Supply Class: 1.8/3.3
• Operating Voltage (vcc): 3.0 to 3.6
• Fpu: No
• Mpu / Mmu: Yes / No
• Timers: 3
• Output Compare Channels: 3
• Input Capture Channels: 3
• Pwm Channels: 4
• 32khz Rtc: Yes
• Calibrated Rc Oscillator: No

Figure 19-6. Example of Partial Page Programming:
19.2.4.2
6222F–ATARM–14-Jan-11
16 words
16 words
16 words
16 words
Erase All Command
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
Erase All Flash
Page 7 erased
32 bits wide
Step 1.
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
...
...
...
...
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
The Partial Programming mode works only with 32-bit (or higher) boundaries. It cannot be used
with boundaries lower than 32 bits (8 or 16-bit for example).
After programming, the page (the whole lock region) can be locked to prevent miscellaneous
write or erase sequences. The lock bit can be automatically set after page programming using
WPL.
Data to be written is stored in an internal latch buffer. The size of the latch buffer corresponds to
the page size. The latch buffer wraps around within the internal memory area address space
and appears to be repeated by the number of pages in it.
Note:
Data is written to the latch buffer before the programming command is written to the Flash Com-
mand Register MC_FCR. The sequence is as follows:
Two errors can be detected in the MC_FSR register after a programming sequence:
The entire memory can be erased if the Erase All Command (EA) in the Flash Command Regis-
ter MC_FCR is written.
• Write the full page, at any page address, within the internal memory area address space
• Programming starts as soon as the page number and the programming command are written
• When programming is completed, the bit FRDY in the Flash Programming Status Register
• Programming Error: A bad keyword and/or an invalid command have been written in the
• Lock Error: The page to be programmed belongs to a locked region. A command must be
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
using only 32-bit access.
to the Flash Command Register. The FRDY bit in the Flash Programming Status Register
(MC_FSR) is automatically cleared.
(MC_FSR) rises. If an interrupt was enabled by setting the bit FRDY in MC_FMR, the
interrupt line of the Memory Controller is activated.
MC_FCR register.
previously run to unlock the corresponding region.
Writing of 8-bit and 16-bit data is not allowed and may lead to unpredictable data corruption.
Programming of the second part of Page 7
FF
FF
FF
CA FE
CA FE
CA FE
FF
FF
FF
FF
FF
FF
(NEBP = 1)
32 bits wide
FF
FF
FF
FF
FF
FF
FF
FF
FF
Step 2.
...
...
...
...
CA
CA
CA
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FF
FE
FE
FE
Programming of the third part of Page 7
SAM7SE512/256/32
CA FE
CA FE
CA FE
FF
FF
FF
DE CA
DE CA
DE CA
FF
FF
FF
(NEBP = 1)
32 bits wide
FF
FF
FF
FF
FF
FF
Step 3.
...
...
...
...
CA
CA
CA
FF
FF
FF
DE CA
DE CA
DE CA
FF
FF
FF
FF
FF
FF
FE
FE
FE
FF
FF
FF
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