SAM7SE256 Atmel Corporation, SAM7SE256 Datasheet - Page 206

• Manufacturer Part Number: SAM7SE256
• Manufacturer: Atmel Corporation

Specifications of SAM7SE256

• Flash (kbytes): 256 Kbytes
• Pin Count: 144
• Max. Operating Frequency: 48 MHz
• Cpu: ARM7TDMI
• Hardware Qtouch Acquisition: No
• Max I/o Pins: 88
• Ext Interrupts: 88
• Usb Transceiver: 1
• Usb Speed: Full Speed
• Usb Interface: Device
• Spi: 1
• Twi (i2c): 1
• Uart: 3
• Ssc: 1
• Graphic Lcd: No
• Video Decoder: No
• Camera Interface: No
• Adc Channels: 8
• Adc Resolution (bits): 10
• Adc Speed (ksps): 384
• Resistive Touch Screen: No
• Temp. Sensor: No
• Crypto Engine: No
• Sram (kbytes): 32
• Self Program Memory: NO
• External Bus Interface: 1
• Dram Memory: sdram
• Nand Interface: Yes
• Picopower: No
• Temp. Range (deg C): -40 to 85
• I/o Supply Class: 1.8/3.3
• Operating Voltage (vcc): 3.0 to 3.6
• Fpu: No
• Mpu / Mmu: Yes / No
• Timers: 3
• Output Compare Channels: 3
• Input Capture Channels: 3
• Pwm Channels: 4
• 32khz Rtc: Yes
• Calibrated Rc Oscillator: No

23.6.3
Figure 23-5. Read Burst with Boundary Row Access
206
D[31:0]
A[12:0]
SDWE
SDCS
SDCK
RAS
CAS
SAM7SE512/256/32
Border Management
col a
Row n
col b
Dna
col c
When the memory row boundary has been reached, an automatic page break is inserted. In this
case, the SDRAM controller generates a precharge command, activates the new row and ini-
tiates a read or write command. To comply with SDRAM timing parameters, an additional clock
cycle is inserted between the precharge/active (t
mand. This is described in
Dnb
col d
Dnc
Dnd
T
RP
= 3
Figure 23-5
Row m
below.
T
RCD
= 3
col a
RP
) command and the active/read (t
CAS = 3
col b
Dma
col c
Dmb
col d
Dmc
6222F–ATARM–14-Jan-11
col e
Dmd
RCD
Dme
) com-