SAM7SE256 Atmel Corporation, SAM7SE256 Datasheet - Page 124

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SAM7SE256

Manufacturer Part Number
SAM7SE256
Description
Manufacturer
Atmel Corporation
Datasheets

Specifications of SAM7SE256

Flash (kbytes)
256 Kbytes
Pin Count
144
Max. Operating Frequency
48 MHz
Cpu
ARM7TDMI
Hardware Qtouch Acquisition
No
Max I/o Pins
88
Ext Interrupts
88
Usb Transceiver
1
Usb Speed
Full Speed
Usb Interface
Device
Spi
1
Twi (i2c)
1
Uart
3
Ssc
1
Graphic Lcd
No
Video Decoder
No
Camera Interface
No
Adc Channels
8
Adc Resolution (bits)
10
Adc Speed (ksps)
384
Resistive Touch Screen
No
Temp. Sensor
No
Crypto Engine
No
Sram (kbytes)
32
Self Program Memory
NO
External Bus Interface
1
Dram Memory
sdram
Nand Interface
Yes
Picopower
No
Temp. Range (deg C)
-40 to 85
I/o Supply Class
1.8/3.3
Operating Voltage (vcc)
3.0 to 3.6
Fpu
No
Mpu / Mmu
Yes / No
Timers
3
Output Compare Channels
3
Input Capture Channels
3
Pwm Channels
4
32khz Rtc
Yes
Calibrated Rc Oscillator
No
20.2.5.3
124
SAM7SE512/256/32
Flash Full Erase Command
The Write Page command (WP) is optimized for consecutive writes. Write handshaking can be
chained; an internal address buffer is automatically increased.
Table 20-7.
The Flash command Write Page and Lock (WPL) is equivalent to the Flash Write Command.
However, the lock bit is automatically set at the end of the Flash write operation. As a lock region
is composed of several pages, the programmer writes to the first pages of the lock region using
Flash write commands and writes to the last page of the lock region using a Flash write and lock
command.
The Flash command Erase Page and Write (EWP) is equivalent to the Flash Write Command.
However, before programming the load buffer, the page is erased.
The Flash command Erase Page and Write the Lock (EWPL) combines EWP and WPL
commands.
This command is used to erase the Flash memory planes.
All lock regions must be unlocked before the Full Erase command by using the CLB command.
Otherwise, the erase command is aborted and no page is erased.
Table 20-8.
Step
1
2
3
4
5
6
7
...
n
n+1
n+2
n+3
n+4
n+5
...
Step
1
2
Handshake Sequence
Write handshaking
Write handshaking
Write handshaking
Write handshaking
Write handshaking
Write handshaking
Write handshaking
...
Write handshaking
Write handshaking
Write handshaking
Write handshaking
Write handshaking
Write handshaking
...
Handshake Sequence
Write handshaking
Write handshaking
Write Command
Full Erase Command
MODE[3:0]
CMDE
ADDR0
ADDR1
ADDR2
ADDR3
DATA
DATA
...
ADDR0
ADDR1
ADDR2
ADDR3
DATA
DATA
...
MODE[3:0]
CMDE
DATA
DATA[15:0]
WP or WPL or EWP or EWPL
32-bit Memory Address First byte
32-bit Flash Address
32-bit Flash Address
32-bit Flash Address Last Byte
*Memory Address++
*Memory Address++
...
32-bit Memory Address First byte
32-bit Flash Address
32-bit Flash Address
32-bit Flash Address Last Byte
*Memory Address++
*Memory Address++
...
DATA[15:0]
EA
0
6222F–ATARM–14-Jan-11

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