cx28365 Mindspeed Technologies, cx28365 Datasheet - Page 199

• Manufacturer Part Number: cx28365
• Description: X12, X6, X4 T3/e3 Framer And Atm Cell Transmission Convergence Sublayer Processor
• Manufacturer: Mindspeed Technologies

CX28365/6/4 Data Sheet
4.3
Table 4-3. DC Characteristics
500028C
Voh
Vol
Iod
RPU
RPD
Ipr
Il
Ioz
Cin
Cio
Cout
Cld
Iosc
IDDC+IDDO
IDDC
IDDO
IDDC
IDDO
IDDC
IDDO
I
GG
Symbol
Output High Voltage (Ioh = –400 µA)
Output Low Voltage (Iol = 4 mA)
Open Drain Output Current Sink
Pullup Resistance
Pulldown Resistance
Resistive Pullup Current
Input Leakage Current
Three-State Leakage Current
Input Capacitance (f = 1 MHz, Vin = 2.4 V)
I/O Capacitance
Output Capacitance
Capacitive Loading (test condition)
Short Circuit Output Current
Supply Current (mode: DS3/PLCP)
VODC = 1.89 V
VODO = 3.465 V, outputs unloaded
Supply Current (mode: E3 direct cell mapping)
VODC = 1.89 V
VODO = 3.465 V, outputs unloaded
Supply Current (mode: Framer bypassed)
VODC = 1.89 V
VODO = 3.465 V, outputs unloaded
Supply Current (mode: CD bypassed)
VODC = 1.89 V
VODO = 3.465 V, outputs unloaded
Typical Current into V
DC Characteristics
All inputs and bidirectional signals have input thresholds compatible with TTL drive
levels. All outputs are CMOS drive levels and can be used with CMOS or TTL logic.
Preliminary Information/Mindspeed Proprietary and Confidential
Parameter
GG
(V
Mindspeed Technologies™
GG
= 5.25V)
Minimum
–10 (TBD)
40 (TBD)
40 (TBD)
–1 (TBD)
2.4
—
—
—
50
50
—
—
—
—
—
—
—
—
100 (TBD)
80 (TBD)
50 (TBD)
Typical
1 (TBD)
1 (TBD)
2 (TBD)
5 (TBD)
2 (TBD)
TBD
TBD
TBD
TBD
850
350
600
—
—
—
—
—
Maximum
500 (TBD)
160 (TBD)
10 (TBD)
3 (TBD)
1 (TBD)
TBD
TBD
TBD
TBD
TBD
200
200
0.4
—
—
—
—
—
Specifications
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
k
k
pF
pF
pF
pF
V
V
A
4
-
3