DF2134AFA20V Renesas Electronics America, DF2134AFA20V Datasheet - Page 786

• Manufacturer Part Number: DF2134AFA20V
• Description: IC H8S/2100 MCU FLASH 80QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2134AFA20V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: IrDA, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 58
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 80-QFP
• For Use With: 3DK2166 - DEV EVAL KIT H8S/2166
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 25 Electrical Characteristics
25.2.6
Table 25.14 shows the flash memory characteristics.
Table 25.14 Flash Memory Characteristics (Programming/Erasing Operating Range)
Conditions (5-V version): V
Item
Programming time *
Erase time *
Reprogramming count
Programming Wait time after SWE-bit setting *
Erase
Notes: 1. Set the times according to the program/erase algorithms.
Rev. 4.00 Jun 06, 2006 page 730 of 1004
REJ09B0301-0400
2. Programming time per 32 bytes (Shows the total period for which the P-bit in the flash
Flash Memory Characteristics
1
*
memory control register (FLMCR1) is set. It does not include the programming
verification time.)
(3-V version): V
3
*
Wait time after PSU-bit setting *
Wait time after P-bit setting *
Wait time after P-bit clear *
Wait time after PSU-bit clear *
Wait time after PV-bit setting *
Wait time after dummy write *
Wait time after PV-bit clear *
Maximum programming
count *
Wait time after SWE-bit setting *
Wait time after ESU-bit setting *
Wait time after E-bit setting *
Wait time after E-bit clear *
Wait time after ESU-bit clear *
Wait time after EV-bit setting *
Wait time after dummy write *
Wait time after EV-bit clear *
Maximum erase count *
6
1
*
2
1
*
*
4
4
*
5
T
a
CC
CC
= 0 to +85°C (wide-range specifications)
= 5.0 V ±10%, V
= 3.0 V to 3.6 V, V
1
*
6
*
1
1
7
1
1
1
1
*
1
*
1
1
1
1
1
4
6
1
1
1
1
Symbol Min
tP
tE
N
x
y
z
N
x
y
z
N
WEC
SS
= 0 V, T
SS
= 0 V, T
—
—
—
10
50
150
10
10
4
2
4
—
10
200
5
10
10
20
2
5
—
a
= 0 to +75°C (regular specifications),
Typ
10
100
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
a
= 0 to +75°C
Max
200
1200
100
—
—
200
—
—
—
—
—
1000
—
—
10
—
—
—
—
—
120
Unit
ms/32 bytes
ms/block
µs
µs
µs
µs
µs
µs
µs
µs
Times
µs
µs
ms
µs
µs
µs
µs
µs
Times
Times
Test
Condition
z = 200 µs
z = 10 ms