DF2134AFA20V Renesas Electronics America, DF2134AFA20V Datasheet - Page 812

• Manufacturer Part Number: DF2134AFA20V
• Description: IC H8S/2100 MCU FLASH 80QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2134AFA20V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: IrDA, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 58
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 80-QFP
• For Use With: 3DK2166 - DEV EVAL KIT H8S/2166
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 25 Electrical Characteristics
25.3.6
Table 25.27 shows the flash memory characteristics.
Table 25.27 Flash Memory Characteristics (Programming/Erasing Operating Range)
Conditions (5-V version): V
Item
Programming time *
Erase time *
Reprogramming count
Data retention time *
Programming Wait time after SWE-bit setting *
Erase
Rev. 4.00 Jun 06, 2006 page 756 of 1004
REJ09B0301-0400
Flash Memory Characteristics
1
*
(3-V version): V
3
*
Wait time after PSU-bit setting *
Wait time after P-bit setting *
Wait time after P-bit clear *
Wait time after PSU-bit clear *
Wait time after PV-bit setting *
Wait time after dummy write *
Wait time after PV-bit clear *
Wait time after SWE-bit clear *
Maximum programming
count *
Wait time after SWE-bit setting *
Wait time after ESU-bit setting *
Wait time after E-bit setting *
Wait time after E-bit clear *
Wait time after ESU-bit clear *
Wait time after EV-bit setting *
Wait time after dummy write *
Wait time after EV-bit clear *
Wait time after SWE-bit clear *
Maximum erase count *
6
1
10
*
2
1
*
*
4
4
*
5
specifications), T
CC
CC
= 4.0 V to 5.5 V, V
= 3.0 V to 3.6 V, V
1
*
6
*
1
1
7
1
1
1
1
*
1
*
1
1
1
1
1
1
1
4
6
1
1
1
1
Symbol Min
tP
tE
N
t
x
y
z1
z2
z3
N
x
y
z
N
a
DRP
WEC
= –40 to +85°C (wide-range specifications)
SS
SS
= 0 V, T
= 0 V, T
—
—
100 *
10
1
50
28
198
8
5
5
4
2
2
100
—
1
100
10
10
10
20
2
4
100
—
8
a
Typ
10
100
10000 *
—
—
—
30
200
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
a
= –20 to +75°C (regular
= –20 to +75°C
9
Max
200
1200
—
—
—
—
32
202
12
—
—
—
—
—
—
1000
—
—
100
—
—
—
—
—
—
120
Unit
ms/
128 bytes
ms/block
Times
Years
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
Times
µs
µs
ms
µs
µs
µs
µs
µs
µs
Times
Test
Condition
1
7
Additional
writing
n
n
6
1000