DF2239TF16I Renesas Electronics America, DF2239TF16I Datasheet - Page 966

MCU 3V 384K I-TEMP 100-TQFP

DF2239TF16I

Manufacturer Part Number
DF2239TF16I
Description
MCU 3V 384K I-TEMP 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2200r
Datasheet

Specifications of DF2239TF16I

Core Processor
H8S/2000
Core Size
16-Bit
Speed
16MHz
Connectivity
I²C, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
72
Program Memory Size
384KB (384K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F2239TF16I
HD64F2239TF16I
Section 27 Electrical Characteristics
27.4.4
A/D converter characteristics for the F-ZTAT and masked ROM versions are shown in table
27.35.
Table 27.35 A/D Conversion Characteristics (F-ZTAT and Masked ROM Versions)
Condition:
Item
Resolution
Conversion time
Analog input capacitance
Permissible signal-source impedance
Nonlinearity error
Offset error
Full-scale error
Quantization
Absolute accuracy
27.4.5
Table 27.36 lists the D/A conversion characteristics.
Table 27.36 D/A Conversion Characteristics (F-ZTAT and Masked ROM Versions)
Condition:
Item
Resolution
Conversion time
Absolute accuracy
Rev. 6.00 Mar. 18, 2010 Page 904 of 982
REJ09B0054-0600
A/D Conversion Characteristics
D/A Conversion Characteristics
V
V
specifications), T
V
V
specifications), T
CC
SS
CC
SS
= AV
= AV
= 3.0 V to 5.5 V, AV
= 3.0 V to 5.5 V, AV
SS
SS
= 0 V, φ = 2 MHz to 13.5 MHz, T
= 0 V, φ = 2 MHz to 13.5 MHz, T
Min
8
a
a
= –40°C to +85°C (wide-range specifications)
= –40°C to +85°C (wide-range specifications)
CC
CC
Condition
Typ
8
±2.0
= 3.6 V to 5.5 V, V
= 3.6 V to 5.5 V, V
Min
10
9.6
Max
8
10
±3.0
±2.0
a
a
= –20°C to +75°C (regular
= –20°C to +75°C (regular
ref
ref
Unit
bit
µs
LSB
LSB
Typ
10
Condition
= 3.6 V to AV
= 3.6 V to AV
Test Conditions
20-pF capacitive load
2-MΩ resistive load
4-MΩ resistive load
Max
10
20
5
±6.0
±4.0
±4.0
±0.5
±8.0
CC
CC
,
,
Unit
bit
µs
pF
LSB
LSB
LSB
LSB
LSB

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