DF2239TF16I Renesas Electronics America, DF2239TF16I Datasheet - Page 983

MCU 3V 384K I-TEMP 100-TQFP

DF2239TF16I

Manufacturer Part Number
DF2239TF16I
Description
MCU 3V 384K I-TEMP 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2200r
Datasheet

Specifications of DF2239TF16I

Core Processor
H8S/2000
Core Size
16-Bit
Speed
16MHz
Connectivity
I²C, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
72
Program Memory Size
384KB (384K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F2239TF16I
HD64F2239TF16I
Note:
Item
TMR
WDT_1
SCI *
A/D
converter
* NMOS controls P35/SCK1 and P34 to output the high voltage. To output the high
Timer clock
pulse width
BUZZ output delay time
Input clock
cycle
Input clock pulse width
Input clock rise time
Input clock fall time
Transmit data delay time
Receive data setup time
(synchronous)
Receive data hold time
(synchronous)
Trigger input setup time
voltage from P35/SCK1 and P34, connect an external pull-up resistor.
Asynchro-
nous
Synchro-
nous
Single edge t
Both edges
Symbol
t
t
t
t
t
t
t
t
t
t
TMCWH
TMCWL
BUZD
Scyc
SCKW
SCKr
SCKf
TXD
RXS
RXH
TRGS
Min
1.5
2.5
4
6
0.4
75
75
40
Condition A
Max
100
0.6
1.5
1.5
100
Rev. 6.00 Mar. 18, 2010 Page 921 of 982
Min
1.5
2.5
4
6
0.4
150
150
60
Section 27 Electrical Characteristics
Conditions B, C
Max
150
0.6
1.5
1.5
150
REJ09B0054-0600
Unit
t
ns
t
t
t
ns
ns
ns
ns
cyc
cyc
Scyc
cyc
Test
Conditions
Figure 27.28
Figure 27.30
Figure 27.31
Figure 27.32
Figure 27.33

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