R0K572115S000BE Renesas Electronics America, R0K572115S000BE Datasheet - Page 281

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R0K572115S000BE

Manufacturer Part Number
R0K572115S000BE
Description
KIT STARTER FOR SH7211
Manufacturer
Renesas Electronics America
Series
Renesas Starter Kits (RSK)r
Type
Microcontrollerr
Datasheets

Specifications of R0K572115S000BE

Contents
CPU Board, LCD Display Module, E8 Emulator, Cable, QuickStart Guide and CD-ROM
For Use With/related Products
SH7211
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Section 8 Bus State Controller (BSC)
(5)
Burst Write
A burst write occurs in the following cases in this LSI.
• Access size in writing is larger than data bus width.
• 16-byte transfer in DMAC
This LSI always accesses SDRAM with burst length 1. For example, write access of burst length 1
is performed continuously 8 times to write 16-byte continuous data to the SDRAM that is
connected to a 16-bit data bus. This access is called burst write with the burst number 8.
The relationship between the access size and the number of bursts is shown in table 8.12.
Figure 8.17 shows a timing chart for burst writes. In burst write, an ACTV command is output in
the Tr cycle, the WRIT command is issued in the Tc1, Tc2, and Tc3 cycles, and the WRITA
command is issued to execute an auto-precharge in the Tc4 cycle. In the write cycle, the write data
is output simultaneously with the write command. After the write command with the auto-
precharge is output, the Trw1 cycle that waits for the auto-precharge initiation is followed by the
Tap cycle that waits for completion of the auto-precharge induced by the WRITA command in the
SDRAM. Between the Trwl and the Tap cycle, a new command will not be issued to the same
bank. However, access to another CS space or another bank in the same SDRAM space is enabled.
The number of Trw1 cycles is specified by the TRWL1 and TRWL0 bits in CS3WCR. The
number of Tap cycles is specified by the WTRP1 and WTRP0 bits in CS3WCR.
Rev. 3.00 Mar. 04, 2009 Page 255 of 1168
REJ09B0344-0300

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