R0K572115S000BE Renesas Electronics America, R0K572115S000BE Datasheet - Page 912

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R0K572115S000BE

Manufacturer Part Number
R0K572115S000BE
Description
KIT STARTER FOR SH7211
Manufacturer
Renesas Electronics America
Series
Renesas Starter Kits (RSK)r
Type
Microcontrollerr
Datasheets

Specifications of R0K572115S000BE

Contents
CPU Board, LCD Display Module, E8 Emulator, Cable, QuickStart Guide and CD-ROM
For Use With/related Products
SH7211
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
• Protection modes
• Programming/erasing time
• Number of programming operations
• Operating frequency for programming/erasing
Rev. 3.00 Mar. 04, 2009 Page 886 of 1168
REJ09B0344-0300
⎯ User branching
Programming is performed in 256-byte units. Each round of programming consists of
application of the programming pulse, reading for verification, and several other steps. Erasing
is performed in block units and each round of erasing consists of several steps. A user-
processing routine can be executed between each round of erasing, and making the setting for
this is called the addition of a user branch.
There are two modes of protection: software protection is applied by register settings and
hardware protection is applied by the level on the FWE pin. Protection of the flash memory
from programming or erasure can be selected.
When an abnormal state is detected, such as runaway execution of programming/erasing, the
protection modes initiate the transition to the error protection state and suspend
programming/erasing processing.
The time taken to program 256 bytes of flash memory in a single round is 2 ms (typ.), which is
equivalent to 7.8 μs per byte. The erasing time is 80 ms (typ.) per 8-Kbyte block, 600 ms (typ.)
per 64-Kbyte block, and 1200 ms (typ.) per 128-Kbyte block.
The flash memory can be programmed up to 100 times.
The operating frequency range for programming/erasing Iφ = 32 to 40 MHz

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