UPD70F3765GF-GAT-AX Renesas Electronics America, UPD70F3765GF-GAT-AX Datasheet - Page 1359

• Manufacturer Part Number: UPD70F3765GF-GAT-AX
• Description: MCU 32BIT V850ES/JX3-H 128-LQFP
• Manufacturer: Renesas Electronics America
• Series: V850ES/Jx3-Hr

Specifications of UPD70F3765GF-GAT-AX

• Core Processor: RISC
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: CSI, EBI/EMI, I²C, UART/USART, USB
• Peripherals: DMA, LVD, PWM, WDT
• Number Of I /o: 96
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 40K x 8
• Voltage - Supply (vcc/vdd): 2.85 V ~ 3.6 V
• Data Converters: A/D 12x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

V850ES/JG3-H, V850ES/JH3-H
R01UH0042EJ0400 Rev.4.00
Sep 30, 2010
Notes 1. In this case, since the erase command is invalid, data different from the data already written in the flash
Block erase
command
prohibit
Chip erase
command
prohibit
Program
command
prohibit
Read
command
prohibit
Boot area
rewrite
prohibit
Function
2. Executable except in boot area.
3. The boot area rewrite prohibit function becomes effective after the reset input.
memory cannot be written.
Block erase command: ×
Chip erase command: √
Program command: √
Read command: √
Block erase command: ×
Chip erase command: ×
Program command: √
Read command: √
Block erase command: ×
Chip erase command: √
Program command: ×
Read command: √
Block erase command: √
Chip erase command: √
Program command: √
Read command: ×
Block erase command: ×
Chip erase command: ×
Program command: ×
Read command: √
Off-Board Programming
Erase, Write, Read Operations When Each Security Is Set
On-Board/
(√: Executable, ×: Not Executable, −: Not Supported)
Note 1
Note 2
Note 2
Table 31-4. Security Setting
Block erasure (FlashBlockErase): √
Chip erasure: −
Write (FlashWordWrite): √
Read (FlashWordRead): √
Block erasure (FlashBlockErase): √
Chip erasure: −
Write (FlashWordWrite): √
Read (FlashWordRead): √
Block erasure (FlashBlockErase): √
Chip erasure: −
Write (FlashWordWrite): √
Read (FlashWordRead): √
Block erasure (FlashBlockErase): √
Chip erasure: −
Write (FlashWordWrite): √
Read (FlashWordRead): √
Block erasure (FlashBlockErase): ×
Chip erasure: −
Write (FlashWordWrite): ×
Read (FlashWordRead): √
Self Programming
Note 2
Note 2
CHAPTER 31 FLASH MEMORY
Setting of
prohibition can be
initialized by chip
erase command.
Setting of
prohibition cannot
be initialized.
Setting of
prohibition can be
initialized by chip
erase command.
Setting of
prohibition can be
initialized by chip
erase command.
Setting of
prohibition cannot
be initialized.
Programming
On-Board/
Off-Board
Notes on Security Setting
Supported only
when setting is
changed from
enable to prohibit
Supported only
when setting is
changed from
enable to
prohibit
Self Programming
Page 1359 of 1509
Note 3