UPD70F3765GF-GAT-AX Renesas Electronics America, UPD70F3765GF-GAT-AX Datasheet - Page 1442

• Manufacturer Part Number: UPD70F3765GF-GAT-AX
• Description: MCU 32BIT V850ES/JX3-H 128-LQFP
• Manufacturer: Renesas Electronics America
• Series: V850ES/Jx3-Hr

Specifications of UPD70F3765GF-GAT-AX

• Core Processor: RISC
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: CSI, EBI/EMI, I²C, UART/USART, USB
• Peripherals: DMA, LVD, PWM, WDT
• Number Of I /o: 96
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 40K x 8
• Voltage - Supply (vcc/vdd): 2.85 V ~ 3.6 V
• Data Converters: A/D 12x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Note Time required to detect the detection voltage and set the RAMS.RAMF bit.
V850ES/JG3-H, V850ES/JH3-H
(T
R01UH0042EJ0400 Rev.4.00
Sep 30, 2010
Detection voltage
Supply voltage rise time
Response time
Minimum pulse width
A
(12) RAM retention detection
= −40 to +85°C, V
Detection voltage (MAX.)
Operating voltage (MIN.)
Detection voltage (MIN.)
Detection voltage (TYP.)
Parameter
Note
RAMS.RAMF bit
Supply voltage
DD
= EV
(V
DD
DD
)
= UV
V
t
t
t
RAMHTH
RAMHD
RAMHW
RAMH
Symbol
DD
= AV
V
After V
REF0
DD
t
RAMHD
t
RAMHTH
= 0 to 2.85 V
= AV
DD
reaches 2.1 V
REF1
Conditions
Cleared by instruction
, V
SS
= AV
CHAPTER 33 ELECTRICAL SPECIFICATIONS
SS
= 0 V, C
0.002
MIN.
1.9
0.2
L
t
= 50 pF)
RAMHW
TYP.
2.0
0.2
t
RAMHD
MAX.
2.1
3.0
Time
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V
ms
ms
ms
Unit