EVB9S12XEP100 Freescale Semiconductor, EVB9S12XEP100 Datasheet - Page 833

BOARD EVAL FOR MC9S12XEP100

EVB9S12XEP100

Manufacturer Part Number
EVB9S12XEP100
Description
BOARD EVAL FOR MC9S12XEP100
Manufacturer
Freescale Semiconductor
Type
MCUr
Datasheet

Specifications of EVB9S12XEP100

Contents
Module and Misc Hardware
Processor To Be Evaluated
MC9S12XEP100
Data Bus Width
16 bit
Interface Type
RS-232
Silicon Manufacturer
Freescale
Core Architecture
S12
Core Sub-architecture
S12
Silicon Core Number
MC9S12
Silicon Family Name
S12XE
Rohs Compliant
Yes
For Use With/related Products
MC9S12XEP100
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Chapter 24
128 KByte Flash Module (S12XFTM128K2V1)
Freescale Semiconductor
Revision
Number
V01.10
V01.11
V01.12
30 Nov 2007
19 Dec 2007
25 Sep 2009
Revision
Date
24.1.2.2/24-835
24.3.2.1/24-845
24.4.2.4/24-872
24.4.2.6/24-873
24.3.2.1/24-845
24.4.1.2/24-864
24.1.3/24-836
24.4.2/24-869
24.4.2/24-869
24.4.2/24-869
24.4.2/24-869
24.3.1/24-838
24.1.3/24-836
24.3.1/24-838
24.3.1/24-838
24.3.2/24-843
24.4.2.11/24-
24.4.2.11/24-
24.4.2.11/24-
24.4.2.19/24-
24.1/24-834
24.6/24-892
Sections
Affected
MC9S12XE-Family Reference Manual , Rev. 1.23
877
877
877
886
Table 24-1. Revision History
- Correction
- Removed Load Data Field command 0x05
- Updated Command Error Handling tables based on parent-child relationship
with FTM256K2
- Corrected Error Handling table for Full Partition D-Flash, Partition D-Flash,
and EEPROM Emulation Query commands
- Corrected maximum allowed ERPART for Full Partition D-Flash and Partition
D-Flash commands
- Corrected P-Flash IFR Accessibility table
- Corrected Buffer RAM size in Feature List
- Corrected EEE Resource Memory Map
- Changed D-Flash size from 16Kbytes to 32Kbytes
- Corrected P-Flash Memory Map
- Change references for D-Flash from 16 Kbytes to 32 Kbytes
- Clarify single bit fault correction for P-Flash phrase
- Expand FDIV vs OSCCLK Frequency table
- Add statement concerning code runaway when executing Read Once
command from Flash block containing associated fields
- Add statement concerning code runaway when executing Program Once
command from Flash block containing associated fields
- Add statement concerning code runaway when executing Verify Backdoor
Access Key command from Flash block containing associated fields
- Relate Key 0 to associated Backdoor Comparison Key address
- Change “power down reset” to “reset”
- Add ACCERR condition for Disable EEPROM Emulation command
The following changes were made to clarify module behavior related to Flash
register access during reset sequence and while Flash commands are active:
- Add caution concerning register writes while command is active
- Writes to FCLKDIV are allowed during reset sequence while CCIF is clear
- Add caution concerning register writes while command is active
- Writes to FCCOBIX, FCCOBHI, FCCOBLO registers are ignored during
reset sequence
toTable 24-6
Description of Changes
833

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