HD64F2145BTE20 Renesas Electronics America, HD64F2145BTE20 Datasheet - Page 682

• Manufacturer Part Number: HD64F2145BTE20
• Description: IC H8S MCU FLASH 256K 100-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of HD64F2145BTE20

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: I²C, IrDA, SCI, X-Bus
• Peripherals: PWM, WDT
• Number Of I /o: 74
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Section 23 ROM
23.8.2
When erasing flash memory, the erase/erase-verify flowchart shown in figure 23.12 should be
followed.
1. Prewriting (setting erase block data to all 0) is not necessary.
2. Erasing is performed in block units. Make only a single-block specification in erase block
3. The time during which the E bit is set to 1 is the flash memory erase time.
4. The watchdog timer (WDT) is set to prevent overprogramming due to program runaway, etc.
5. For a dummy write to a verify address, write 1-byte data H'FF to an address whose lower two
6. If the read data is unerased, set erase mode again, and repeat the erase/erase-verify sequence as
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REJ09B0300-0300
registers 1 and 2 (EBR1 and EBR2). To erase multiple blocks, each block must be erased in
turn.
An overflow cycle of approximately (y + z +
bits are B'00. Verify data can be read in longwords from the address to which a dummy write
was performed.
before. The maximum number of repetitions of the erase/erase-verify sequence is N.
Erase/Erase-Verify
+
ms is allowed.