HD64F2145BTE20 Renesas Electronics America, HD64F2145BTE20 Datasheet - Page 779

• Manufacturer Part Number: HD64F2145BTE20
• Description: IC H8S MCU FLASH 256K 100-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of HD64F2145BTE20

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: I²C, IrDA, SCI, X-Bus
• Peripherals: PWM, WDT
• Number Of I /o: 74
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Notes: 1. Set the times according to the program/erase algorithms.
2. Programming time per 128 bytes (Shows the total period for which the P-bit in FLMCR1
3. Block erase time (Shows the total period for which the E-bit in FLMCR1 is set. It does
4. Maximum programming time (t
5. The maximun number of writes (N) should be set according to the actual set value of
6. Maximum erase time (t
7. The maximum number of erases (N) should be set according to the actual set value of z
8. Minimum number of times for which all characteristics are guaranteed after rewriting
9. Reference value for 25 C (as a guideline, rewriting should normally function up to this
10. Data retention characteristic when rewriting is performed within the specification range,
t
The wait time after P-bit setting (z1, z2, and z3) should be alternated according to the
1
t
is set. It does not include the programming verification time.)
not include the erase verification time.)
+ wait time after P-bit setting (z2)
z1, z2 and z3 to allow programming within the maximum programming time (t
number of writes (n) as follows:
7
to allow erasing within the maximum erase time (t
(Guarantee range is 1 to minimum value).
value).
including the minimum value.
P
E
(max) = (wait time after P-bit setting (z1) + (z3))
(max) = Wait time after E-bit setting (z)
n
n
6
1000
z1 = 30µs, z3 = 10µs
z2 = 200µs
E
(max))
P
(max))
((N) – 6)
maximum erase count (N)
Rev. 3.00 Mar 21, 2006 page 723 of 788
E
Section 27 Electrical Characteristics
(max)).
6
REJ09B0300-0300
P
(max)).