HD64F2145BTE20 Renesas Electronics America, HD64F2145BTE20 Datasheet - Page 759

IC H8S MCU FLASH 256K 100-QFP

HD64F2145BTE20

Manufacturer Part Number
HD64F2145BTE20
Description
IC H8S MCU FLASH 256K 100-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheets

Specifications of HD64F2145BTE20

Core Processor
H8S/2000
Core Size
16-Bit
Speed
20MHz
Connectivity
I²C, IrDA, SCI, X-Bus
Peripherals
PWM, WDT
Number Of I /o
74
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Item
Input high
voltage
Input low
voltage
Output high
voltage
Port 7
P97, P86, P52,
P42
Input pins except (1)
and (2) above
(Ports C to G are
added in the
H8S/2160B and
H8S/2161B.)
RES, STBY,
MD1, MD0
PA7 to PA0
NMI, EXTAL,
input pins except (1)
and (3) above
(Ports C to G are
added in the
H8S/2160B and
H8S/2161B.)
All output pins
(except P97,
P86, P52, and
P42) *
(Ports C to F are
added in the
H8S/2160B and
H8S/2161B.)
P97, P86, P52, and
P42 *
(Port G is added in the
H8S/2160B and
H8S/2161B.)
4
4
*
5
*
8
(2)
(3)
Symbol Min
V
V
V
IH
IL
OH
V
V
V
–0.3
–0.3
–0.3
V
V
V
V
0.5
CC
CC
CC
CC
CC
CC
CC
B – 0.5
B – 1.0
– 0.5
– 1.0
0.7
0.7
0.7
Rev. 3.00 Mar 21, 2006 page 703 of 788
Typ
Section 27 Electrical Characteristics
Max
AV
5.5
V
V
V
0.8
V
CC
CC
CC
CC
CC
B
+ 0.3
+ 0.3
0.1
0.2
0.2
Unit
V
V
V
V
V
REJ09B0300-0300
Test
Conditions
V
to 4.0 V
V
to 5.5 V
V
to 3.6 V
I
I
(V
to 3.6 V,
V
to 4.5 V)
I
OH
OH
OH
CC
CC
CC
CC
CC
= –200 µA
= –1 mA,
= –200 µA
B = 2.7 V
B = 4.0 V
B = 2.7 V
= 2.7 V
= 2.7 V

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