HD64F2145BTE20 Renesas Electronics America, HD64F2145BTE20 Datasheet - Page 770

• Manufacturer Part Number: HD64F2145BTE20
• Description: IC H8S MCU FLASH 256K 100-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of HD64F2145BTE20

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: I²C, IrDA, SCI, X-Bus
• Peripherals: PWM, WDT
• Number Of I /o: 74
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Section 27 Electrical Characteristics
Table 27.7 Bus Timing (2) (Advanced Mode)
Conditions: V
Item
Address delay time
Address setup time
Address hold time
CS delay time (IOS)
AS delay time
RD delay time 1
RD delay time 2
Read data setup time
Read data hold time
Read data access time 1
Read data access time 2
Read data access time 3
Read data access time 4
Read data access time 5
HWR, LWR delay time 1
HWR, LWR delay time 2
HWR, LWR pulse width 1
HWR, LWR pulse width 2
Write data delay time
Write data setup time
Write data hold time
WAIT setup time
WAIT hold time
Rev. 3.00 Mar 21, 2006 page 714 of 788
REJ09B0300-0300
operating frequency, T
CC
= 2.7 V to 3.6 V, V
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AD
AS
AH
CSD
ASD
RSD1
RSD2
RDS
RDH
ACC1
ACC2
ACC3
ACC4
ACC5
WRD1
WRD2
WSW1
WSW2
WDD
WDS
WDH
WTS
WTH
a
CC
= –20 to +75°C
B = 2.7 V to 5.5 V, V
Min
—
0.5
0.5
—
—
—
—
35
0
—
—
—
—
—
—
—
1.0
1.5
—
0
20
60
10
t
t
t
t
cyc
cyc
cyc
cyc
– 30
– 20
– 40
– 40
Condition
10 MHz
SS
Max
60
—
—
60
60
60
60
—
—
1.0
1.5
2.0
2.5
3.0
60
60
—
—
60
—
—
—
—
= 0 V, = 2 MHz to maximum
t
t
t
t
t
cyc
cyc
cyc
cyc
cyc
– 80
– 50
– 80
– 50
– 80
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Test
Conditions
Figures 27.11
to 27.15