HD64F2676VFC33 Renesas Electronics America, HD64F2676VFC33 Datasheet - Page 228
HD64F2676VFC33
Manufacturer Part Number
HD64F2676VFC33
Description
IC H8S MCU FLASH 256K 144-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2600r
Specifications of HD64F2676VFC33
Core Processor
H8S/2600
Core Size
16-Bit
Speed
33MHz
Connectivity
IrDA, SCI
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
103
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 12x10b; D/A 4x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
144-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
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Section 6 Bus Controller (BSC)
6.6.5
Figure 6.21 shows the basic access timing for DRAM space.
The four states of the basic timing consist of one T
output cycle) state, and the T
When DRAM space is accessed, the RD signal is output as the OE signal for DRAM. When
connecting DRAM provided with an EDO page mode, the OE signal should be connected to the
Rev. 3.00 Mar 17, 2006 page 176 of 926
REJ09B0283-0300
Read
Write
Note: n = 2 to 5
Basic Timing
Address bus
RASn (CSn)
UCAS, LCAS
WE (HWR)
OE (RD)
Data bus
WE (HWR)
OE (RD)
Data bus
Figure 6.21 DRAM Basic Access Timing (RAST = 0, CAST = 0)
c1
and two T
T
p
Row address
c2
(column address output cycle) states.
High
High
p
T
(precharge cycle) state, one T
r
T
c1
Column address
T
c2
r
(row address
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