HD64F2676VFC33 Renesas Electronics America, HD64F2676VFC33 Datasheet - Page 254

• Manufacturer Part Number: HD64F2676VFC33
• Description: IC H8S MCU FLASH 256K 144-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2600r

Specifications of HD64F2676VFC33

• Core Processor: H8S/2600
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: IrDA, SCI
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 103
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 12x10b; D/A 4x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-QFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Section 6 Bus Controller (BSC)
6.7.5
When the DCTL pin is fixed to 1, synchronous clock (SDRAM ) is output from the CS5 pin.
When the frequency multiplication factor of the PLL circuit of this LSI is set to 1 or 2,
SDRAM is 90° phase shift from . Therefore, a stable margin is ensured for the synchronous
DRAM that operates at the rising edge of clocks. Figure 6.43 shows the relationship between
and SDRAM . When the frequency multiplication factor of the PLL circuit is 4, the phase of
SDRAM and that of are the same.
When the CLK pin of the synchronous DRAM is directly connected to SDRAM of this LSI, it is
recommended to set the frequency multiplication factor of the PLL circuit to 1 or 2.
Note: SDRAM output timing is shown when the frequency multiplication factor of the PLL
6.7.6
The four states of the basic timing consist of one T
output cycle) state, and the T
When areas 2 to 5 are set for the continuous synchronous DRAM space, settings of the WAITE bit
of BCR, RAST, CAST, RCDM bits of DRAMCR, and the CBRM bit of REFCR are ignored.
Figure 6.44 shows the basic timing for synchronous DRAM.
Rev. 3.00 Mar 17, 2006 page 202 of 926
REJ09B0283-0300
Figure 6.43 Relationship between and SDRAM (when PLL frequency multiplication
circuit is 1 or 2.
Synchronous DRAM Clock
Basic Operation Timing
SDRAMø
c1
and two T
factor is 1 or 2)
c2
(column address output cycle) states.
T cyc
p
(precharge cycle) state, one T
1/4 T cyc (90˚)
r
(row address