HD64F2676VFC33 Renesas Electronics America, HD64F2676VFC33 Datasheet - Page 310

• Manufacturer Part Number: HD64F2676VFC33
• Description: IC H8S MCU FLASH 256K 144-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2600r

Specifications of HD64F2676VFC33

• Core Processor: H8S/2600
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: IrDA, SCI
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 103
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 12x10b; D/A 4x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-QFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Section 6 Bus Controller (BSC)
6.14.3
CBR refreshing/auto refreshing cannot be executed while the external bus is released. Setting the
BREQOE bit to 1 in BCR beforehand enables the BREQO signal to be output when a CBR
refresh/auto refresh request is issued.
Note: In the H8S/2678 Group, the auto refresh control is not supported.
6.14.4
When the BREQOE bit is set to 1 and the BREQO signal is output, BREQO may go low before
the BACK signal.
This will occur if the next external access request or CBR refresh request occurs while internal bus
arbitration is in progress after the chip samples a low level of BREQ.
6.14.5
Setting of Synchronous DRAM Interface: The DCTL pin must be fixed to 1 to enable the
synchronous DRAM interface. Do not change the DCTL pin during operation.
Connection Clock: Be sure to set the clock to be connected to the synchronous DRAM to
SDRAM .
WAIT
WAIT
WAIT
WAIT Pin: In the continuous synchronous DRAM space, insertion of the wait state by the WAIT
pin is disabled regardless of the setting of the WAITE bit in BCR.
Bank Control: This LSI cannot carry out the bank control of the synchronous DRAM. All banks
are selected.
Burst Access: The burst read/burst write mode of the synchronous DRAM is not supported. When
setting the mode register of the synchronous DRAM, set to the burst read/single write and set the
burst length to 1.
CAS Latency: When connecting a synchronous DRAM having CAS latency of 1, set the BE bit
to 0 in the DRAMCR.
Rev. 3.00 Mar 17, 2006 page 258 of 926
REJ09B0283-0300
External Bus Release Function and CBR Refreshing/Auto Refreshing
BREQO
BREQO Output Timing
Notes on Usage of the Synchronous DRAM
BREQO
BREQO