HD64F2676VFC33 Renesas Electronics America, HD64F2676VFC33 Datasheet - Page 233

• Manufacturer Part Number: HD64F2676VFC33
• Description: IC H8S MCU FLASH 256K 144-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2600r

Specifications of HD64F2676VFC33

• Core Processor: H8S/2600
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: IrDA, SCI
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 103
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 12x10b; D/A 4x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-QFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Section 6 Bus Controller (BSC)
6.6.9
Wait Control
There are two ways of inserting wait states in a DRAM access cycle: program wait insertion and
pin wait insertion using the WAIT pin.
Wait states are inserted to extend the CAS assertion period in a read access to DRAM space, and
to extend the write data setup time relative to the falling edge of CAS in a write access.
Program Wait Insertion: When the bit in ASTCR corresponding to an area designated as DRAM
space is set to 1, from 0 to 7 wait states can be inserted automatically between the T
state and T
c1
c2
state, according to the settings in registers WTCRA and WTCRB.
Pin Wait Insertion: When the WAITE bit in BCR is set to 1 and the ASTCR bit is set to 1, wait
input by means of the WAIT pin is enabled. When DRAM space is accessed in this state, a
) is first inserted. If the WAIT pin is low at the falling edge of in the last T
program wait (T
or
w
c1
state is inserted. If the WAIT pin is held low, T
T
state, another T
states are inserted until it
w
w
w
goes high.
Figures 6.26 and 6.27 show examples of wait cycle insertion timing in the case of 2-state and 3-
state column address output cycles.
Rev. 3.00 Mar 17, 2006 page 181 of 926
REJ09B0283-0300