ATEVK1104 Atmel, ATEVK1104 Datasheet - Page 417
ATEVK1104
Manufacturer Part Number
ATEVK1104
Description
KIT DEV/EVAL FOR AVR32 AT32UC3A
Manufacturer
Atmel
Series
AVR®32r
Type
MCUr
Datasheets
1.ATAVRONE-PROBECBL.pdf
(16 pages)
2.ATEVK1104.pdf
(826 pages)
3.ATEVK1104.pdf
(90 pages)
4.ATEVK1104.pdf
(6 pages)
5.ATEVK1104.pdf
(12 pages)
Specifications of ATEVK1104
Contents
Evaluation Board, Software and Documentation
Processor To Be Evaluated
AT32UC3A3
Data Bus Width
32 bit
Interface Type
USB, SPI, USART
Silicon Manufacturer
Atmel
Core Architecture
AVR
Core Sub-architecture
AVR UC3
Silicon Core Number
AT32UC3A3256
Silicon Family Name
AVR
Kit Contents
Board CD Docs
Rohs Compliant
Yes
For Use With/related Products
AT32UC3A3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ATEVK1104
Manufacturer:
Atmel
Quantity:
135
- ATAVRONE-PROBECBL PDF datasheet
- ATEVK1104 PDF datasheet #2
- ATEVK1104 PDF datasheet #3
- ATEVK1104 PDF datasheet #4
- ATEVK1104 PDF datasheet #5
- Current page: 417 of 826
- Download datasheet (20Mb)
28.7
28.7.1
Figure 28-5. Write Burst, 32-bit SDRAM Access
SDRAMC_A[12:0]
28.7.2
32058J–AVR32–04/11
D[31:0]
SDWE
SDCS
SDCK
Functional Description
RAS
CAS
SDRAM Controller Write Cycle
SDRAM Controller Read Cycle
Row n
The SDRAM Controller allows burst access or single access. In both cases, the SDRAM control-
ler keeps track of the active row in each bank, thus maximizing performance. To initiate a burst
access, the SDRAM Controller uses the transfer type signal provided by the master requesting
the access. If the next access is a sequential write access, writing to the SDRAM device is car-
ried out. If the next access is a write-sequential access, but the current access is to a boundary
page, or if the next access is in another row, then the SDRAM Controller generates a precharge
command, activates the new row and initiates a write command. To comply with SDRAM timing
parameters, additional clock cycles are inserted between precharge/active (t
active/write (t
Configuration Register” on page
The SDRAM Controller allows burst access, incremental burst of unspecified length or single
access. In all cases, the SDRAM Controller keeps track of the active row in each bank, thus
maximizing performance of the SDRAM. If row and bank addresses do not match the previous
row/bank address, then the SDRAM controller automatically generates a precharge command,
activates the new row and starts the read command. To comply with the SDRAM timing param-
eters, additional clock cycles on SDCK are inserted between precharge and active commands
(t
uration register of the SDRAM Controller. After a read command, additional wait states are
generated to comply with the CAS latency (1, 2 or 3 clock delays specified in the configuration
register).
RP
) and between active and read command (t
t
RCD
= 3
col a
RCD
Dna
) commands. For definition of these timing parameters, refer to the
col b
Dnb
col c
Dnc
427. This is described in
col d
Dnd
col e
Dne
RCD
col f
Dnf
). These two parameters are set in the config-
col g
Dng
Figure 28-5
col h
Dnh
col i
Dni
below.
col j
AT32UC3A
Dnj
RP
) commands and
col k
Dnk
”SDRAMC
col l
Dnl
417
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