D12674RVFQ33D Renesas Electronics America, D12674RVFQ33D Datasheet - Page 250

• Manufacturer Part Number: D12674RVFQ33D
• Description: MCU 3V 0K I-TEMP 144-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2600r

Specifications of D12674RVFQ33D

• Core Processor: H8S/2600
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: IrDA, SCI
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 103
• Program Memory Type: ROMless
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 12x10b; D/A 4x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Program Memory Size: -
• Other names: HD6412674RVFQ33D; HD6412674RVFQ33D

Section 6 Bus Controller (BSC)
6.7
In the H8S/2678R Group, external address space areas 2 to 5 can be designated as continuous
synchronous DRAM space, and synchronous DRAM interfacing performed. The synchronous
DRAM interface allows synchronous DRAM to be directly connected to this LSI. A synchronous
DRAM space of up to 8 Mbytes can be set by means of bits RMTS2 to RMTS0 in DRAMCR.
Synchronous DRAM of CAS latency 1 to 4 can be connected.
Note: The synchronous DRAM interface is not supported in the H8S/2678 Group.
6.7.1
Areas 2 to 5 are designated as continuous synchronous DRAM space by setting bits RMTS2 to
RMTS0 in DRAMCR. The relation between the settings of bits RMTS2 to RMTS0 and
synchronous DRAM space is shown in table 6.7. Possible synchronous DRAM interface settings
are and continuous area (areas 2 to 5).
Table 6.7
With continuous synchronous DRAM space, CS2, CS3, CS4 pins are used as RAS, CAS, WE
signal. The (OE) pin of the synchronous DRAM is used as the CKE signal, and the CS5 pin is
used as synchronous DRAM clock (SDRAM ). The bus specifications for continuous
synchronous DRAM space conform to the settings for area 2. The pin wait and program wait for
the continuous synchronous DRAM are invalid.
Commands for the synchronous DRAM can be specified by combining RAS, CAS, WE, and
address-precharge-setting command (Prechrge-sel) output on the upper column addresses.
Rev. 3.00 Mar 17, 2006 page 198 of 926
REJ09B0283-0300
RMTS2
0
1
Synchronous DRAM Interface
Setting Continuous Synchronous DRAM Space
RMTS1
Relation between Settings of Bits RMTS2 to RMTS0 and Synchronous DRAM
Space
0
1
0
1
RMTS0
1
0
1
0
1
0
1
Normal space Normal space Normal space
Normal space Normal space
DRAM space
Area 5
Continuous synchronous DRAM space
Mode settings of synchronous DRAM
DRAM space
Reserved (setting prohibited)
Continuous DRAM space
Area 4
DRAM space
DRAM space
Area 3
DRAM space
DRAM space
DRAM space
Area 2